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Número de pieza DLA60I1200HA
Descripción High Efficiency Standard Rectifier
Fabricantes IXYS 
Logotipo IXYS Logotipo



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High Efficiency Standard Rectifier
Single Diode
Part number
DLA60I1200HA
31
DLA60I1200HA
VRRM
I FAV
VF
=
=
=
1200 V
60 A
1.1 V
Backside: cathode
Features / Advantages:
Planar passivated chips
Very low leakage current
Very low forward voltage drop
Improved thermal behaviour
Applications:
Diode for main rectification
For single and three phase
bridge configurations
Package: TO-247
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20121016a

1 page




DLA60I1200HA pdf
DLA60I1200HA
Rectifier
80
700
104
VR = 0 V
60
IF
40
[A]
20
TVJ = 150°C
TVJ = 125°C
TVJ = 25°C
600
IFSM
500
[A]
400
TVJ = 45°C
TVJ = 150°C
I2t
103
TVJ = 45°C
[A2s]
TVJ = 150°C
0
0.0 0.5 1.0 1.5
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
50 Hz, 80% VRRM
300
0.001
0.01
0.1
1
t [s]
Fig. 2 Surge overload current
102
1
2 3 4 5 6 7 8 910
t [ms]
Fig. 3 I2t versus time per diode
90
80
70
60
50
Ptot
40
DC =
1
0.5
0.4
0.33
0.17
0.08
[W3]0
20
RthHA =
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
8.0 K/W
80
60
IF(AV)M
40
[A]
DC =
1
0.5
0.4
0.33
0.17
0.08
20
10
0
0 10 20 30 40 50 60 70 0 25 50 75 100 125 150 175 200
IF(AV)M [A]
Tamb [°C]
Fig. 4 Power dissipation vs. direct output current and ambient temperature
0
0 50 100 150 200
TC [°C]
Fig. 5 Max. forward current vs.
case temperature
0.3
ZthJC
0.2
[K/W]
0.1
Constants for ZthJC calculation:
i Rthi (K/W)
ti (s)
1 0.044
0.007
2 0.027
0.0001
3 0.029
0.02
4 0.05
0.37
5 0.15
0.15
0.0
1
10 100
t [ms]
Fig. 6 Transient thermal impedance junction to case
1000
10000
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20121016a

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