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PDF DMA30E1800HA Data sheet ( Hoja de datos )

Número de pieza DMA30E1800HA
Descripción Standard Rectifier
Fabricantes IXYS 
Logotipo IXYS Logotipo



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Standard Rectifier
Single Diode
Part number
DMA30E1800HA
13
DMA30E1800HA
VRRM
I FAV
VF
=
=
=
1800 V
30 A
1.22 V
Backside: anode
Features / Advantages:
Planar passivated chips
Very low leakage current
Very low forward voltage drop
Improved thermal behaviour
Applications:
Diode for main rectification
For single and three phase
bridge configurations
Package: TO-247
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130123b

1 page




DMA30E1800HA pdf
Rectifier
60
DMA30E1800HA
300 103
50 Hz, 80% VRRM
VR = 0 V
40
IF
[A]
20
TVJ = 150°C
TVJ = 125°C
TVJ = 25°C
0
0.5 1.0 1.5
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
250
IFSM
[A]
200
TVJ = 45°C
TVJ = 150°C
I2t
[A2s]
TVJ = 45°C
TVJ = 150°C
150
0.001
0.01
0.1
1
t [s]
Fig. 2 Surge overload current
102
1
2 3 4 5 6 7 8 910
t [ms]
Fig. 3 I2t versus time per diode
50
40
30
Ptot
20
[W]
dc =
1
0.5
0.4
0.33
0.17
0.08
10
RthKA =
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
8.0 K/W
80
70
60
IF(AV)M50
40
[A]
30
20
10
dc =
1
0.5
0.4
0.33
0.17
0.08
0
0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 175 200
IF(AV)M [A]
Tamb [°C]
Fig. 4 Power dissipation versus direct output current and ambient temperature
0.8
0
0 25 50 75 100 125 150 175 200
TC [°C]
Fig. 5 Max. forward current versus
case temperature
0.6
ZthJC
0.4
[K/W]
0.2
0.0
1
10 100
t [ms]
Fig. 6 Transient thermal impedance junction to case
1000
10000
Constants for ZthJC calculation:
i Rthi (K/W)
ti (s)
1 0.03
0.0003
2 0.072
0.0065
3 0.131
0.027
4 0.367
0.105
5 0.1
0.8
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130123b

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