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PDF MDQ18N50G Data sheet ( Hoja de datos )
| Número de pieza | MDQ18N50G | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDQ18N50G
N-Channel MOSFET 500V, 20.0A, 0.27Ω
General Description
.
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 500V
ID
= 20.0A
RDS(ON) ≤ 0.27Ω
Applications
Power Supply
HID
Lighting
@ VGS = 10V
@ VGS = 10V
D
TO-247
S
DG
GG
G
S
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* ID limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Symbol
RθJA
RθJC
Jun. 2011. Ver 1.2
1
Rating
500
±30
20
12.5
80
245
1.96
24.5
4.5
950
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Rating
40
0.51
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page  
Physical Dimension
TO-247
Dimensions are in millimeters, unless otherwise specified
EA
A2
Jun. 2011. Ver 1.2
b2
b1
b E1
e c A1
Dimension
A
A1
A2
b
b1
b2
c
D
D1
E
E1
E2
e
L
L1
ΦP
Q
S
Min(mm)
4.70
2.20
1.50
0.99
2.59
1.65
0.38
20.30
13.08
15.45
13.06
4.32
19.81
-
3.50
5.38
Max(mm)
5.31
2.60
2.49
1.40
3.43
2.39
0.89
21.46
-
16.26
14.02
5.49
5.45BSC
20.57
4.50
3.70
6.20
6.15BSC
5
MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDQ18N50G.PDF ] | |
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