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PDF DSA120X150LB Data sheet ( Hoja de datos )

Número de pieza DSA120X150LB
Descripción Schottky Diode
Fabricantes IXYS 
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No Preview Available ! DSA120X150LB Hoja de datos, Descripción, Manual

Schottky Diode Gen2
High Performance Schottky Diode
Low Loss and Soft Recovery
Parallel Legs
DSA 120X150LB
VRRM = 150 V
IDAV = 2x 75 A
VF = 0.80 V
Part number
DSA120X150LB
Features / Advantages:
• Very low VF
• Extremely low switching losses
• Low IRM values
• Improved thermal behaviour
• High reliability circuits operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
D1
7
8 = n/c
9
D2
A1
7
n.c.
8
Itsoohlaeteadtsisnukrface
A2
9
654
K1
321
K2
E72873
6
5
4
3
2
1
Applications:
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Package: SMPD
• Isolation Voltage: 3000 V~ (t = 1s)
• Industry convenient outline
• RoHS compliant
• Soldering pins for PCB mounting
• Backside: DCB ceramic
• Reduced weight
• Advanced power cycling
IXYS reserves the right to change limits, test conditions and dimensions.
© 2013 IXYS All rights reserved
Data according ot IEC 60747 and per semiconductor unless otherwise specified
20130610e
1-5

1 page




DSA120X150LB pdf
DSA 120X150LB
150 100 10000
120
IF 90
[A] 60
TVJ =
150°C
125°C
25°C
10 TVJ=175°C
150°C
1 125°C
IR
[mA]
0.1
100°C
75°C
0.01 50°C
CT
[pF]
1000
30 0.001 25°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF [V]
Fig. 1 Maximum forward voltage
drop characteristics
0.0001
0
50 100
VR [V]
150
Fig. 2 Typ. reverse current
IR vs. reverse voltage VR
100
0
TVJ = 25°C
50 100 150
VR [V]
Fig. 3 Typ. junction capacitance
CT vs. reverse voltage VR
120 90
100
IF(AV)
[A]
80
60
40
20
d = 0.5
DC
IRMS = 100 A
60
P(AV)
[W]
30
d=
DC
0.5
0.33
0.25
0.17
0.08
0
0 50 100 150 200
TC [°C]
Fig. 4 Average forward current
IF(AV) vs. case temperature TC
0
0 20 40 60 80 100
IF(AV) [A]
Fig. 5 Forward power loss
@ TJ = 175°C
1.4
1.2
1.0
0.8
ZthJH
0.6
[K/W] 0.4
0.2
0.0
0.001
0.01
0.1
t [s]
Fig. 6 Transient thermal impedance junction
1
Note: All curves are per diode
10
IXYS reserves the right to change limits, test conditions and dimensions.
© 2013 IXYS All rights reserved
Data according ot IEC 60747 and per semiconductor unless otherwise specified
20130610e
5-5

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