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PDF S80N10R Data sheet ( Hoja de datos )
| Número de pieza | S80N10R | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SI-TECH | |
| Logotipo |  |
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SI-TECH SEMICONDUCTOR CO.,LTD
S80N10R/S
N-Channel MOSFET
Features
█ 80V,100A,Rds(on)(typ)=5.8mΩ @Vgs=10V
█ High Ruggedness
█ Fast Switching
█ 100% Avalanche Tested
█ Improved dv/dt Capability
General Description
This Power MOSFET is produced using Si-Tech’s advanced
Trench MOS Technology. This latest technology has been
especially designed to minimize on-state resistance, have a
high rugged avalanche characteristics.These devices are well
suited for low voltage application such as automotive,DC/DC
converters,and high efficiency switch for power management
in portable and battery products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
PD
TJ
TSTG
Drain-Source Voltage
Continuous Drain Current (TC=25℃)
Continuous Drain Current (TC=100℃)
Pulsed Drain Current (Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2)
Maximum Power Dissipation (TC=25℃)
Derating Factor above 25℃
Operating Junction Temperature Range
Storage Temperature Range
Thermal Characteristics
Symbol
Rth j-c
Rth c-s
Rth j-a
Parameter
Thermal Resistance, Junction to case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
Value
80
100
70
320
± 30
784
208
1.39
-55 to +175
-55 to +175
Max.
0.72
0.5
62.5
Units
V
A
A
A
V
mJ
W
W/℃
℃
℃
Units
℃/ W
℃/ W
℃/ W
- 1 - Mar.2016
1 page  
SI-TECH SEMICONDUCTOR CO.,LTD
S80N10R/S
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Tj- Junction Temperature (°C)
Capacitance
VSD- Source-Drain Voltage (V)
Gate Charge
VDS- Drain-Source Voltage (V)
-5-
QG - Gate Charge (nC)
Mar.2016
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet S80N10R.PDF ] | |
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