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PDF DSA80C100PB Data sheet ( Hoja de datos )

Número de pieza DSA80C100PB
Descripción Schottky Diode
Fabricantes IXYS 
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Schottky Diode Gen ²
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DSA80C100PB
1 23
DSA80C100PB
VRRM
I FAV
VF
= 100 V
= 2x 40 A
= 0.8 V
Backside: cathode
Features / Advantages:
Very low Vf
Extremely low switching losses
Low Irm values
Improved thermal behaviour
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Applications:
Rectifiers in switch mode power
supplies (SMPS)
Free wheeling diode in low voltage
converters
Package: TO-220
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031a

1 page




DSA80C100PB pdf
DSA80C100PB
Schottky
80
TVJ = 150°C
TVJ = 125°C
60 TVJ = 25°C
IF
40
[A]
20
0
0.0 0.4 0.8 1.2
VF [V]
Fig. 1 Max. forward voltage
drop characteristics
40
100
10
IR 1
[A] 0.1
0.01
175°C
150°C
125°C
100°C
75°C
50°C
25°C
1200
1000
TVJ = 25°C
800
CJ
600
[pF]
400
200
0.001
0 20 40 60 80 100 120
VR [V]
Fig. 2 Typ. value of rev. current
IR vs. reverse voltage VR
0
0 20 40 60 80 100
VF [V]
Fig. 3 Typ. junction capacitance
CJ vs. reverse voltage VR
25
D = 0.5 DC
20
30
IDAVM
20
[A]
10
0
0 40 80 120 160 200
TC [°C]
Fig. 4 Average forward current
IF(AV) vs. case temp. TC
Ptot 15
[W] 10
5
D=
DC
0.5
0.33
0.25
0.17
0.08
0
0 5 10 15 20 25 30 35
IFAV [A]
Fig. 5 Forward power loss
characteristics
0.6
RthJC
0.4
[K/W]
0.2
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031a

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