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PDF DSA300I45NA Data sheet ( Hoja de datos )

Número de pieza DSA300I45NA
Descripción Schottky Diode
Fabricantes IXYS 
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No Preview Available ! DSA300I45NA Hoja de datos, Descripción, Manual

Schottky Diode Gen ²
High Performance Schottky Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSA300I45NA
21
34
DSA300I45NA
VRRM
I FAV
VF
=
=
=
preliminary
45 V
300 A
0.76 V
Backside: Isolated
Features / Advantages:
Very low Vf
Extremely low switching losses
Low Irm values
Improved thermal behaviour
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Applications:
Rectifiers in switch mode power
supplies (SMPS)
Free wheeling diode in low voltage
converters
Package: SOT-227B (minibloc)
Isolation Voltage: 3000 V~
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Base plate: Copper
internally DCB isolated
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120907a

1 page




DSA300I45NA pdf
Schottky
600
DSA300I45NA
preliminary
500
400
IF
300
[A]
200
100
TVJ =
25°C
125°C
150°C
0
0.2 0.4 0.6 0.8 1.0 1.2
VF [V]
Fig. 1 Max. forward voltage
drop characteristics
Fig. 2 Typ. reverse current
IR vs. reverse voltage VR
Fig. 3 Typ. junction capacitance
CT vs. reverse voltage VR
200
150
P(AV)
100
[W]
50
dc =
1
0.5
0.4
0.33
0.17
0.08
RthHA
0.2
0.4
0.6
0.8
1.0
2.0
0
0 50 100 150 200 250 0
IF(AV) [A]
40 80 120
Tamb [°C]
Fig. 4a Power dissipation versus direct output current
Fig. 4b and ambient temperature
350
300
250
IF(AV)
200
[A]
150
100
dc =
1
0.5
0.4
0.33
0.17
50
0
160 0 40 80 120 160
TC [°C]
Fig. 5 Average forward current
IF(AV) vs. case temp. TC
0.16
0.12
ZthJC
0.08
[K/W]
0.04
Rthi [K/W]
0.017
0.013
0.02
0.05
0.05
ti [s]
0.01
0.00001
0.01
0.045
0.3
0.00
1
10 100 1000
t [ms]
Fig. 6 Transient thermal impedance junction to case
10000
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120907a

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