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PDF 1N4003GP Datasheet ( Hoja de datos )

Número de pieza 1N4003GP
Descripción Glass Passivated Silicon Rectifier Diodes
Fabricantes Diotec 
Logotipo Diotec Logotipo

Total 2 Páginas
		
1N4003GP Hoja de datos, Descripción, Manual
1N4001GP ... 1N4007GP
1N4001GP ... 1N4007GP
Version 2013-02-20
Ø 2.6±0.1
Ø 0.77±0.07
Glass Passivated Silicon Rectifier Diodes
Glaspassivierte Silizium-Gleichrichterdioden
Nominal current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Dimensions - Maße [mm]
1A
50...1000 V
~DO-41
~DO-204AC
0.4 g
Maximum ratings
Type
Typ
1N4001GP
1N4002GP
1N4003GP
1N4004GP
1N4005GP
1N4006GP
1N4007GP
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
50
100
200
400
600
800
1000
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
50
100
200
400
600
800
1000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing – Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TA = 75°C
TA = 100°C
f > 15 Hz
TA = 25°C
TA = 25°C
IFAV
IFRM
IFSM
i2t
Tj
TS
1 A 1)
0.8 A 1)
5.4 A 1)
27/30 A
3.6 A2s
-50...+175°C
-50...+175°C
1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
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