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PDF 2N4214 Data sheet ( Hoja de datos )
| Número de pieza | 2N4214 | |
| Descripción | SILICON CONTROLLED RECTIFIERS | |
| Fabricantes | DIGITRON SEMICONDUCTORS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N4214 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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DIGITRON
2N4212-2N4216, 2N4219
SEMICONDUCTORS
SILICON CONTROLLED RECTIFIERS
1.6 AMPS RMS, 25-400 VOLTS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Peak repetitive forward and reverse blocking voltage (1)
2N4212
2N4213
2N4214
2N4215
2N4216
2N4219
VDRM or VRRM
Forward current RMS
(All conduction angles)
IT(RMS)
Peak surge current
(One cycle, 60Hz)
No repetition until thermal equilibrium is restored
ITSM
Forward peak gate power
PGFM
Forward average gate power
PGF(AV)
Forward peak gate current
IGFM
Forward peak gate voltage
VGFM
Reverse peak gate voltage
VGRM
Operating junction temperature range
TJ
Storage temperature range
Tstg
Lead solder temperature
(> 1/16” from case, 10 s max.)
-
Note 1: VDRM and VRRM can be applied for all types on a continuous dc basis without incurring damage.
Value
25
50
100
150
200
400
1.6
15
0.1
0.01
0.1
6
6
-65 to 125
-65 to 150
230
Unit
Volts
Amps
Amps
Watt
Watt
Amp
Volts
Volts
°C
°C
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted, RGK = 1000ohms)(1)
Characteristic
Symbol
Min
Max
Unit
Peak forward or reverse blocking current
(Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 125°C
IDRM, IRRM
- 10 µA
- 200
Forward “on” voltage
(ITM = 1Adc peak)
Gate trigger current (continuous dc)(2)
(VD = 7V, RL = 100ohms)
TC = 25°C
TC = -65°C
VTM
IGT
Volts
- 1.5
- 100 µAdc
- 300
Gate trigger voltage (continuous dc)
(VD = 7V, RL = 100ohms, TC = 25°C)
(VD = 7V, RL = 100ohms, TC = -65°C)
(VD = rated VDRM, RL = 100ohms, TJ = 125°C)
- 0.8
VGT - 1 Volts
0.1 -
Holding current
(VD = 7V)
TC = 25°C
IHX
- 3 mA
TC = -65°C
-7
Note 1: Thyristor devices shall not be tested with a constant current source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. Thyristor
devices shall not have a positive bias applied to the gate concurrently with a negative potential applied to the anode.
Note 2: RGK current is not included in the measurement.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20131210
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N4214.PDF ] | |
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