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PDF 2N7639-GA Data sheet ( Hoja de datos )
| Número de pieza | 2N7639-GA | |
| Descripción | OFF Silicon Carbide Junction Transistor | |
| Fabricantes | GeneSiC | |
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2N7639-GA
Normally – OFF Silicon Carbide
Junction Transistor
Features
• 210°C maximum operating temperature
• Electrically Isolated Base Plate
• Gate Oxide Free SiC Switch
• Exceptional Safe Operating Area
• Excellent Gain Linearity
• Compatible with 5 V TTL Gate Drive
• Temperature Independent Switching Performance
• Low Output Capacitance
• Positive Temperature Coefficient of RDS,ON
• Suitable for Connecting an Anti-parallel Diode
Advantages
• Compatible with Si MOSFET/IGBT Gate Drive ICs
• > 20 µs Short-Circuit Withstand Capability
• Lowest-in-class Conduction Losses
• High Circuit Efficiency
• Minimal Input Signal Distortion
• High Amplifier Bandwidth
Package
• RoHS Compliant
VDS
RDS(ON)
ID (Tc = 25°C)
hFE (Tc = 25°C)
=
=
=
=
600 V
60 mΩ
32 A
80
D
G
GDS
S
TO – 257 (Isolated Base-plate Hermetic Package)
Applications
• Down Hole Oil Drilling
• Geothermal Instrumentation
• Solenoid Actuators
• General Purpose High-Temperature Switching
• Amplifiers
• Solar Inverters
• Switched-Mode Power Supply (SMPS)
• Power Factor Correction (PFC)
Table of Contents
Section I: Absolute Maximum Ratings .......................................................................................................... 1
Section II: Static Electrical Characteristics................................................................................................... 2
Section III: Dynamic Electrical Characteristics ............................................................................................ 2
Section IV: Figures .......................................................................................................................................... 3
Section V: Driving the 2N7639-GA ................................................................................................................. 6
Section VI: Package Dimensions ................................................................................................................... 9
Section VII: SPICE Model Parameters ......................................................................................................... 10
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Gate Peak Current
Turn-Off Safe Operating Area
Symbol
VDS
ID
IGM
RBSOA
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Operating and Storage Temperature
SCSOA
VGS
VDS
Ptot
Tj, Tstg
Conditions
VGS = 0 V
TJ = 210°C, TC = 25°C
TVJ = 210°C, IG = 1.5 A,
Clamped Inductive Load
TVJ = 210°C, IG = 1.5 A, VDS = 400 V,
Non Repetitive
TJ = 210°C, TC = 25°C
Values
600
32
2
ID,max = 32
@ VDS ≤ VDSmax
>20
30
40
172
-55 to 210
Unit
V
A
A
A
µs
V
V
W
°C
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
Pg 1 of 9
1 page  
2N7639-GA
Figure 13: Typical Turn On Energy Losses and Switching
Times vs. Drain Current
Figure 14: Typical Turn Off Energy Losses and Switching
Times vs. Drain Current
Figure 15: Power Derating Curve
Figure 16: Typical Hard Switched Device Power Loss vs.
Switching Frequency 2
Figure 17: Turn-Off Safe Operating Area
Figure 18: Transient Thermal Impedance
2 – Representative values based on device switching energy loss. Actual losses will depend on gate drive conditions, device load, and circuit topology.
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
Pg 5 of 9
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| PDF Descargar | [ Datasheet 2N7639-GA.PDF ] | |
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