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PDF MS12N60 Data sheet ( Hoja de datos )
| Número de pieza | MS12N60 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Bruckewell | |
| Logotipo |  |
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MS12N60
N-Channel Enhancement Mode Power MOSFET
Description
The MS12N60 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• BVDSS=6600V typically @ Tj=150°C
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Ballast
• Inverter
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box x
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
ID
Drain Current -Continuous (TC=100°C)
IDM Pulsed Drain Current
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
IAR Avalanche Current
dV/dt
Peak Diode Recovery dV/dt
• Drain current limited by maximum junction temperature
Value
600
±30
12
7.2
48
870
22.5
12.0
3.5
Unit
V
V
A
A
A
mJ
mJ
A
V/ns
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014
1 page  
MS12N60
N-Channel Enhancement Mode Power MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MS12N60.PDF ] | |
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