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Número de pieza | PZTA42 | |
Descripción | NPN SILICON PLANAR EPITAXIAL TRANSISTOR | |
Fabricantes | CDIL | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PZTA42 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PZTA42
SOT-223
Formed SMD Package
For use in Telephony and Professional Communication Equipment
Complementary PZTA92
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Base Voltage
VCBO
300
Collector Emitter Voltage
VCEO
300
Emitter Base Voltage
VEBO
6.0
Collector Current (DC)
IC 100
Collector Current Peak
ICM 200
Base Current Peak
IBM 100
Power Dissipation upto Tamb=25ºC
*PD
1.2
Storage Temperature
Tstg - 65 to +150
Junction Temperature
Tj 150
Operating Ambient Temperature
Tamb
- 65 to +150
UNITS
V
V
V
mA
mA
mA
W
ºC
ºC
ºC
THERMAL RESISTANCE
From junction to ambient
From junction to soldering point
*Rth (j-a)
Rth (j-a)
104
23
K/W
K/W
* Device Mounted on printed circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
ABSOLUTE MAXIMUM RATINGS (Tamb=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN TYP MAX UNITS
Collector Cut Off Current
Emitter Cut Off Current
ICBO
IEBO
VCB=200V, IE=0
VEB=6V, IC=0
20 nA
100 nA
DC Current Gain
hFE
IC=1mA, VCE=10V
25
IC=10mA, VCE=10V
IC=30mA, VCE=10V
40
40
Collector Emitter Saturation Voltage
VCE (sat)
IC=20mA, IB=2mA
0.5 V
Base Emitter Saturation Voltage
VBE (sat)
IC=20mA, IB=2mA
0.9 V
Feedback Capacitance
Cre VCB=20V, f=1MHz
3.0 pF
Transition Frequency
fT IC=10mA, VCE=20V,f=100MHz 50
MHz
PZTA42Rev011104E
Continental Device India Limited
Data Sheet
Page 1 of 4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet PZTA42.PDF ] |
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