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Número de pieza | VS23S010C-S | |
Descripción | 1 Megabit SPI SRAM | |
Fabricantes | VLSI | |
Logotipo | ||
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No Preview Available ! VS23S010C-S Datasheet
VS23S010C-S - 1 Megabit SPI SRAM
with Dual-I/O and Quad-I/O
Features
• Flexible 1.5V - 3.6V operating voltage
• 131,072 x 8-bit SRAM organization
• Serial Peripheral Interface (SPI) mode
0 compatible
– Byte, Page and Sequential modes
– Supports Single, Dual and Quad
I/O read and write
– Fast operation: the whole mem-
ory can be filled in 262158 or read
in 262159 cycles (Quad-I/O SPI,
Quad address mode)
XCS
SO/IO1
XWP/IO2
GND
1
2
3
4
8 VCC
7 XHOLD/IO3
6 SCLK
5 SI/IO1
Figure 1: SOIC8 narrow package, compatible
with standard pin out (not to scale).
Operating Modes
– XHOLD and XWP pins
• High operating frequencies
– Up to 36 MHz for SPI
• Active Low-power
– Read current 200 µA at 1 MHz (Sin-
gle I/O, SO=0, TA=+85◦C, VDD=3.3V)
• Industrial temperature range
– -40◦C to + 85◦C
• Pb-Free and RoHS compliant
1,048,576 bit
(128K x 8)
SRAM
Array
Description
The VLSI Solution VS23S010C-S is an easy-
to-use and versatile serial SRAM device. The
memory is accessed via an SPI compatible
serial bus.
Applications
• Microcontroller RAM extension
• VoIP and internet data stream buffer
• Audio data buffer
SPI
Serial Interface
Figure 2: VS23S010C-S blocks
In SPI mode SRAM and control registers can
be accessed. Dual-I/O and Quad-I/O modes
are used only for SRAM read and write.
Following are connection examples for differ-
ent operating modes. Some I/Os of VS23S010C-
S are unconnected, because they have inter-
nal pull-up or pull-down resistors. Note also,
Version: 0.9 [Preliminary], 2015-01-16
1
1 page 1 Disclaimer
VS23S010C-S Datasheet
2 DEFINITIONS
This is a preliminary data sheet. All properties and figures are subject to change.
2 Definitions
B Byte, 8 bits
b Bit
LSB Least Significant Bit
MSB Most Significant Bit
POR Power On Reset
SPI Serial Peripheral Interface
SRAM Static Random Access Memory
TBD To Be Defined
Version: 0.9 [Preliminary], 2015-01-16
5
5 Page VS23S010C-S Datasheet
3 ELECTRICAL CHARACTERISTICS & SPECIFICATIONS
AC Test Conditions
AC Waveform:
Input pulse level
0.1×VDD to 0.9×VDD
Input rise/fall time
(TBD) ns
Operating temperature -40 ◦C to +85 ◦C
CL = (TBD) pF
Timing Measurement Reference Level:
Input
0.5×VDD
Output
0.5×VDD
3.4 Current Consumption
TA = +25 ◦C, XCS=VDD, SI=SO=SCLK=GND, other inputs connected to VDD or GND by on-
chip pull-up or pull-down resistors of the pins.
Parameter
Min Typ Max Unit Test Conditions
Stand-by current 1,2
85 300 µA VDD = 1.95 V - 3.6 V
1 This parameter is periodically sampled and is not 100% tested.
2 The workaround for lowering stand-by current is described in Chapter 8.2
3.4.1 SPI Mode
VDD = 3.3 V, TA = +85 ◦C, these parameters are periodically sampled and are not 100% tested.
Parameter
Min Typ Max Unit
Test Conditions
VDD current, SPI single output read
VDD current, SPI single port write
& read, two patterns1
200 µA
650 µA
1.05 mA
0.1-1.3
mA
1.0-2.7
mA
FSCLK = 1 MHz, SO = 0
FSCLK = 10 MHz, SO = 0
FSCLK = 24 MHz, SO = 0
FSCLK = 1 MHz, TA = +25 ◦C
FSCLK = 10 MHz, TA = +25 ◦C
1 Current is heavily data-dependent.
Version: 0.9 [Preliminary], 2015-01-16
11
11 Page |
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