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Número de pieza | UGF18060 | |
Descripción | Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET | |
Fabricantes | CREE | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de UGF18060 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! UGF18060
60W, 1.8 GHz, 26V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
Designed for DCS base station applications in the frequency band 1.805 to 1.88 GHz. Rated with
a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier
Power Amplifiers in Class AB operation.
• ALL GOLD metal system for highest reliability
• Industry standard package
• Suggested alternative to the MRF18060
• Internally matched for repeatable manufacturing
• High gain, high efficiency and high linearity
• Application Specific Performance, 1.88 GHz
GSM:
60 Watts
12.5 dB
EDGE:
25 Watts
12.5 dB
IS95 CDMA:
7.5 Watts 12.5 dB
CDMA2000:
TBD Watts 12.5 dB
Package Type 440171
PN: UGF18060F
Package Type 440172
PN: UGF18060P
Rev 2.
UGF18060
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet UGF18060.PDF ] |
Número de pieza | Descripción | Fabricantes |
UGF18060 | Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET | CREE |
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