PDF MAGX-011086 Data sheet ( Hoja de datos )

Número de pieza	MAGX-011086
Descripción	GaN Wideband Transistor
Fabricantes	MA-COM
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No Preview Available ! MAGX-011086 GaN Wideband Transistor 28 V, 4 W DC - 6 GHz Features  GaN on Si HEMT D-Mode Transistor  Suitable for linear and saturated applications  Tunable from DC - 6 GHz  28 V Operation  9 dB Gain at 5.8 GHz  45% Drain Efficiency at 5.8 GHz  100% RF Tested  Thermally-Enhanced 4 mm 24-Lead QFN  RoHS* Compliant Rev. V1 Description The MAGX-011086 GaN HEMT is a wideband transistor optimized for DC - 6 GHz operation in a user friendly package ideal for high bandwidth applications. The device has been designed for saturated and linear operation with output power levels of 4 W (36 dBm) in an industry standard, low inductance, surface mount QFN package. The pads of the package form a coplanar launch that naturally absorbs lead parasitics and features a small PCB outline for space constrained applications. The MAGX-011086 is ideally suited for Wireless LAN, High Dynamic Range LNA’s, broadband general purpose, land mobile radio, defense communications, wireless infrastructure, and ISM applications. Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology. Ordering Information Part Number MAGX-011086 MAGX-011086-SMBPPR Package Bulk Quantity Sample Board * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. Functional Schematic N/C N/C N/C N/C N/C N/C 24 23 22 21 20 19 N/C 1 18 N/C N/C 2 17 N/C RFIN / VG 3 RFIN / VG 4 N/C 5 N/C 6 Input Match 25 Paddle 16 RFOUT / VD 15 RFOUT / VD 14 N/C 13 N/C 7 8 9 10 11 12 N/C N/C N/C N/C N/C N/C Pin Configuration1 Pin No. 1-2 3-4 5 -14 15 - 16 17 - 24 25 Pin Name N/C RFIN / VG N/C RFOUT / VD N/C Paddle2 Function No Connection RF Input / Gate No Connection RF Output / Drain No Connection Ground / Source 1. All no connection pins may be left floating or grounded. 2. The exposed pad centered on the package bottom must be connected to RF and DC ground and provide a low thermal resistance heat path. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 1 page MAGX-011086 GaN Wideband Transistor 28 V, 4 W DC - 6 GHz Load-Pull Performance: VDS = 28 V, IDQ = 50 mA, TA = 25°C Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance Rev. V1 Gain vs. Output Power 30 25 20 15 10 20 900 MHz 2500 MHz 3500 MHz 25 30 35 Output Power (dBm) 40 Drain Efficiency vs. Output Power 70 60 900 MHz 2500 MHz 50 3500 MHz 40 30 20 10 0 20 25 30 35 Output Power (dBm) 40 Gain vs. Output Power 20 15 10 5 20 4000 MHz 5000 MHz 5800 MHz 25 30 35 Output Power (dBm) 40 Drain Efficiency vs. Output Power 70 60 4000 MHz 5000 MHz 50 5800 MHz 40 30 20 10 0 20 25 30 35 Output Power (dBm) 40 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 5 Page

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Número de pieza	Descripción	Fabricantes
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