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Número de pieza | TC74HC279AF | |
Descripción | CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TC74HC279AF (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! TC74HC279AP/AF
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74HC279AP, TC74HC279AF
Quad S -R Latch
The TC74HC279A is a high speed CMOS QUAD S-R LATCH
fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
Each latch has an independent Q output and Set and Reset
inputs. S and R are active low. When S input is low, the Q
output goes high and when R input is low, the Q output goes
low. When both S and R are low, S takes precedence
resulting Q = low. When both of S and R are held high, Q
output doesn’t change.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Features
• High speed: tpd = 12 ns (typ.) at VCC = 5 V
• Low power dissipation: ICC = 2 μA (max) at Ta = 25°C
• High noise immunity: VNIH = VNIL = 28% VCC (min)
• Symmetrical output impedance: |IOH| = IOL = 4 mA (min)
• Balanced propagation delays: tpLH ∼− tpHL
• Wide operating voltage range: VCC (opr) = 2 to 6 V
• Pin and function compatible with 74LS279
Pin Assignment
TC74HC279AP
TC74HC279AF
Weight
DIP16-P-300-2.54A
SOP16-P-300-1.27A
: 1.00 g (typ.)
: 0.18 g (typ.)
Start of commercial production
1988-05
1 2014-03-01
1 page TC74HC279AP/AF
AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns)
Characteristics
Symbol
Output transition time
Propagation delay
time
( S1 , S2 -Q)
Propagation delay
time
( S -Q)
Propagation delay
time
( R -Q)
Input capacitance
Power dissipation
capacitance
tTLH
tTHL
tpLH
tpHL
tpLH
tpHL
tpLH
tpHL
CIN
CPD
(Note)
Test Condition
⎯
⎯
⎯
⎯
⎯
VCC (V)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
Ta = 25°C
Min Typ. Max
⎯ 30 75
⎯ 8 15
⎯ 7 13
⎯ 45 130
⎯ 15 26
⎯ 13 22
⎯ 38 100
⎯ 12 20
⎯ 10 17
⎯ 42 120
⎯ 14 24
⎯ 12 20
⎯ 5 10
⎯ ⎯ 18 ⎯
Ta =
−40 to 85°C
Min Max
⎯ 95
⎯ 19
⎯ 16
⎯ 165
⎯ 33
⎯ 28
⎯ 125
⎯ 25
⎯ 21
⎯ 150
⎯ 30
⎯ 26
⎯ 10
⎯⎯
Unit
ns
ns
ns
ns
pF
pF
Note:
CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD・VCC・fIN + ICC/4 (per circuit)
5 2014-03-01
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet TC74HC279AF.PDF ] |
Número de pieza | Descripción | Fabricantes |
TC74HC279AF | CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC | Toshiba |
TC74HC279AP | CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC | Toshiba |
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