|
|
PDF FDB3672 Data sheet ( Hoja de datos )
| Número de pieza | FDB3672 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDB3672 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
July 2004
FDB3672
N-Channel PowerTrench® MOSFET
100V, 44A, 28mΩ
Features
• rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A
• Qg(tot) = 24nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82760
GATE
DRAIN
(FLANGE)
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
D
SOURCE
TO-263AB
FDB SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
G
S
Ratings
100
±20
44
31
7.2
Figure 4
120
120
0.8
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
1.25
62
43
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2004 Fairchild Semiconductor Corporation
FDB3672 Rev. A
1 page  
Typical Characteristics TC = 25°C unless otherwise noted
1.2 1.2
ID = 250µA
VGS = VDS, ID = 250µA
1.0
1.1
0.8
1.0
0.6
0.4
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.9
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
3000
1000
COSS ≅ CDS + CGD
CRSS = CGD
100
CISS = CGS + CGD
10
VDD = 50V
8
6
4
VGS = 0V, f = 1MHz
10
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 13. Capacitance vs Drain to Source
Voltage
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 44A
ID = 22A
5 10 15 20
Qg, GATE CHARGE (nC)
25
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
©2004 Fairchild Semiconductor Corporation
FDB3672 Rev. A
5 Page 
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FAST
ISOPLANAR™
Power247™
SuperFET™
ActiveArray™
Bottomless™
CoolFET™
FASTr™
FPS™
FRFET™
LittleFET™
PowerSaver™
MICROCOUPLER™ PowerTrench
MicroFET™
QFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
CROSSVOLT™ GlobalOptoisolator™ MicroPak™
DOME™
GTO™
MICROWIRE™
QS™
SyncFET™
QT Optoelectronics™ TinyLogic
EcoSPARK™ HiSeC™
MSX™
Quiet Series™
TINYOPTO™
E2CMOS™
I2C™
MSXPro™
RapidConfigure™
TruTranslation™
EnSigna™
i-Lo™
OCX™
FACT™
ImpliedDisconnect™ OCXPro™
FACT Quiet Series™
OPTOLOGIC
RapidConnect™
UHC™
µSerDes™
UltraFET
SILENT SWITCHER VCX™
Across the board. Around the world.™ OPTOPLANAR™
The Power Franchise
PACMAN™
Programmable Active Droop™
POP™
SMART START™
SPM™
Stealth™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TOANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANY LIABILITY
ARISING OUT OF THEAPPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEYANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTENAPPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet FDB3672.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDB3672 | N-Channel PowerTrench MOSFET |  Kexin |
| FDB3672 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
| FDB3672_F085 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |