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PDF FPD6836P70 Data sheet ( Hoja de datos )
| Número de pieza | FPD6836P70 | |
| Descripción | Low-Noise High-Frequency Packaged pHEMT | |
| Fabricantes | Compound Photonics | |
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FPD6836P70
Low‐Noise High‐Frequency Packaged pHEMT
GENERAL DESCRIPTION
Package ‐ P70
The FPD6836P70 is a low parasitic, surface
mountable packaged depletion mode
pseudomorphic High Electron Mobility Transistor
(pHEMT) optimised for low‐noise, high‐frequency
applications.
Key Characteristics
Applications
22dBm Output Power (P1dB)
15dB Gain at 5.8GHz
0.8dB Noise Figure at 5.8GHz
32dB Output IP3 at 5.8GHz
45% Power‐Added Efficiency at 5.8GHz
Usable Gain to 18GHz
Gain blocks and medium power stages
WiMax (2GHz to 11GHz)
WLAN 802.11a (5.8GHz)
Point‐to‐Point Radio (to 18GHz)
TYPICAL PERFORMANCE
PARAMETER
P1dB at Gain Compression
Power‐Added Efficiency
Maximum Stable Gain (|S21/S12|)
Small‐Signal Gain
Output Third‐Order Intercept Point
Saturated Drain‐Source Current
Maximum Drain‐Source Current
Transconductance
Gate‐Source Leakage Current
Pinch‐Off Voltage
Gate‐Source Breakdown Voltage
Gate‐Drain Breakdown Voltage
Thermal Resistivity
Noise Figure
Note: TAMBIENT=22°C
SYMBOL
P1dB
PAE
MSG
SSG
OIP3
IDSS
IMAX
GM
IGSO
VP
BVGS
BVGD
θJC
NF
SPECIFICATION
MIN TYP MAX
22
45
15
12
14 16
UNIT
dBm
%
dB
32 dBm
90
|0.7|
|12.0|
|14.5|
105 135 mA
215 mA
140 mS
1 µA
|1.0| |1.3| V
|14.0|
V
|16.0|
V
275
°C/W
0.8
CONDITIONS
VDS=5V, IDS=55mA
VDS=5V, IDS=55mA, POUT=P1dB
VDS=5V, IDS=55mA, f=12GHz
VDS=5V, IDS=55mA, f=18GHz
VDS=5V, IDS=55mA
VDS=5V, IDS=55mA,
POUT=10dBm SCL
VDS=1.3V, VGS=0V
VDS=1.3V, VGS=+1V
VDS=1.3V, VGS=0V
VGS=‐5V
VDS=1.3V, IDS=0.2mA
IGS=0.36mA
IGD=0.36mA
VDS=5V, IDS=55mA
FPD6836P70 MA‐DAT‐NP‐001O
Page 1 of 5
Compound Photonics
www.compoundphotonics.com
Revision 2.0
1 page  
FPD6836P70
Low‐Noise High‐Frequency Packaged pHEMT
PREFERRED ASSEMBLY INSTRUCTIONS
This package is compatible with both lead free and leaded solder reflow processes as defined within IPC/JEDEC
J‐STD‐020C. The maximum package temperature should not exceed 260°C. Package leads are gold plated.
HANDLING PRECAUTIONS
To avoid damage to the devices, care should be exercised during handling. Proper
Electrostatic Discharge (ESD) precautions should be observed at all stages of storage,
handling, assembly, and testing.
ESD/MSL RATING
These devices should be treated as Class 0 (0V to 250V) using the human body model as defined in JEDEC
Standard No. JS‐001‐2012.
The device has an MSL rating of Level 1. To determine this rating, preconditioning was performed to the device
per the Pb‐free solder profile defined within IPC/JEDEC J‐STD‐020, moisture/reflow sensitivity classification for
non‐hermetic solid state surface mount devices.
RELIABILITY
A MTTF in excess of 4 million hours at a channel temperature of 150°C is achieved for the process used to
manufacture this device.
DISCLAIMERS
This product is not designed for use in any space based or life sustaining/supporting equipment.
ORDERING INFORMATION
Reel of 1000
Reel of 100
Bag of 3
DELIVERY QUANTITY
ORDERING CODE
FPD6836P70
FPD6836P70 ‐ 100
FPD6836P70 ‐ 003
FPD6836P70 MA‐DAT‐NP‐001O
Page 5 of 5
Compound Photonics
www.compoundphotonics.com
Revision 2.0
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet FPD6836P70.PDF ] | |
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