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Número de pieza | K2900-01 | |
Descripción | N-channel MOS-FET | |
Fabricantes | Fuji Electric | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de K2900-01 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! > Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
2SK2900-01
FAP-IIIB Series
N-channel MOS-FET
60V 14,5mΩ ±45A 60W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
V DS
ID
I D(puls)
V GS
E AV
PD
T ch
T stg
60
±45
±180
±30
461.9
60
150
-55 ~ +150
* L=0,304mH, VCC=24V
Unit
V
A
A
V
mJ*
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
BV DSS
ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=10mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=60V
Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=30V
VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=22.5A
VGS=10V
Forward Transconductance
g fs
ID=22.5A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
Turn-Off-Time toff (ton=td(off)+tf)
t d(on)
tr
t d(off)
VCC=30V
VGS=10V
ID=45A
Avalanche Capability
t f RGS=10 Ω
I AV L = 100µH Tch=25°C
Diode Forward On-Voltage
V SD
IF=45A VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=45A VGS=0V
Reverse Recovery Charge
Q rr -dI/dt=100A/µs Tch=25°C
Min.
60
2,5
10
45
Typ.
3
10
0,2
10
12,0
25
2300
910
260
18
55
70
48
1,0
60
0,11
Max.
3,5
500
1,0
100
14,5
3450
1370
390
30
80
120
80
1,5
Unit
V
V
µA
mA
nA
mΩ
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
R th(ch-c)
R th(ch-a)
Symbol
channel to case
channel to ambient
Min. Typ. Max. Unit
2,08 °C/W
75,00 °C/W
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet K2900-01.PDF ] |
Número de pieza | Descripción | Fabricantes |
K2900-01 | N-channel MOS-FET | Fuji Electric |
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