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PDF FSBB20CH60D Data sheet ( Hoja de datos )
| Número de pieza | FSBB20CH60D | |
| Descripción | Motion SPM 3 module | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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August 2015
FSBB20CH60D
Motion SPM® 3 Series
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 20 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low-Loss, Short-Circuit Rated IGBTs
• Very Low Thermal Resistance Using Al2O3 DBC
Substrate
• Built-In Bootstrap Diodes and Dedicated Vs Pins
Simplify PCB Layout
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• LVIC Temperature-Sensing Built-In for Temperature
Monitoring
• Isolation Rating: 2500 Vrms / 1 min.
FSBB20CH60D is an advanced Motion SPM® 3 module
providing a fully-featured, high-performance inverter
output stage for AC Induction, BLDC, and PMSM
motors. These modules integrate optimized gate drive of
the built-in IGBTs to minimize EMI and losses, while also
providing multiple on-module protection features includ-
ing under-voltage lockouts, over-current shutdown,
thermal monitoring of drive IC, and fault reporting. The
built-in, high-speed HVIC requires only a single supply
voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's internal IGBTs.
Separate negative IGBT terminals are available for each
phase to support the widest variety of control algorithms.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9044 - Motion SPM® 3 Series Users Guide
General Description
Figure 1. Package Overview
Package Marking and Ordering Information
Device
FSBB20CH60D
Device Marking
FSBB20CH60D
Package
SPMCC-027
Packing Type
Rail
Quantity
10
©2015 Fairchild Semiconductor Corporation
FSBB20CH60D Rev. 1.0
1
www.fairchildsemi.com
1 page  
Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)
Inverter Part
Symbol
Parameter
Conditions
VPN
VPN(Surge)
VCES
± IC
± ICP
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Applied between P - NU, NV, NW
Applied between P - NU, NV, NW
TC = 25°C, TJ 150°C (Note 4)
TC = 25°C, TJ 150°C, Under 1 ms Pulse
Width (Note 4)
PC Collector Dissipation
TJ Operating Junction Temperature
TC = 25°C per One Chip (Note 4)
Rating
450
500
600
20
40
65
-40 ~ 150
Unit
V
V
V
A
A
W
°C
Control Part
Symbol
Parameter
VCC Control Supply Voltage
VBS High-Side Control Bias Voltage
VIN Input Signal Voltage
VFO Fault Output Supply Voltage
IFO Fault Output Current
VSC Current Sensing Input Voltage
Conditions
Applied between VCC(H), VCC(L) - COM
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
Applied between VFO - COM
Sink Current at VFO pin
Applied between CSC - COM
Rating
20
20
-0.3 ~ VCC+0.3
-0.3 ~ VCC+0.3
2
-0.3 ~ VCC+0.3
Unit
V
V
V
V
mA
V
Bootstrap Diode Part
Symbol
Parameter
VRRM
IF
IFP
Maximum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
TJ Operating Junction Temperature
Conditions
TC = 25°C, TJ 150°C (Note 4)
TC = 25°C, TJ 150°C, Under 1 ms Pulse
Width (Note 4)
Rating
600
0.5
2.0
-40 ~ 150
Unit
V
A
A
°C
Total System
Symbol
Parameter
VPN(PROT) Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
TC
TSTG
VISO
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
VCC = VBS = 13.5 ~ 16.5 V, TJ = 150°C,
Non-repetitive, < 2 s
See Figure 2
60 Hz, Sinusoidal, AC 1 minute, Connection
Pins to Heat Sink Plate
Rating
400
-40 ~ 125
-40 ~ 125
2500
Unit
V
°C
°C
Vrms
Thermal Resistance
Symbol
Parameter
Conditions
Min.
Rth(j-c)Q
Rth(j-c)F
Junction to Case Thermal Resistance
(Note 5)
Inverter IGBT part (per 1 / 6 module)
Inverter FWD part (per 1 / 6 module)
-
-
Note:
4. These values had been made an acquisition by the calculation considered to design factor.
5. For the measurement point of case temperature (TC), please refer to Figure 2.
Typ.
-
-
Max.
1.90
2.85
Unit
°C / W
°C / W
©2015 Fairchild Semiconductor Corporation
FSBB20CH60D Rev. 1.0
5
www.fairchildsemi.com
5 Page 
Time Charts of SPMs Protective Function
Input Signal
Protection
Circuit State
RESET
SET
Control
Supply Voltage
UVCCR
a1
UVCCD
a2
a3
a4
RESET
a6
a7
Output Current
Fault Output Signal
a5
Figure 10. Under-Voltage Protection (Low-Side)
a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under voltage detection (UVCCD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts with a fixed pulse width.
a6 : Under voltage reset (UVCCR).
a7 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.
Input Signal
Protection
Circuit State
RESET
UVBSR
Control
b1
Supply Voltage
UVBSD
b2
SET
b3
b4
RESET
b5
b6
Output Current
High-level (no fault output)
Fault Output Signal
Figure 11. Under-Voltage Protection (High-Side)
b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under voltage reset (UVBSR).
b6 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.
©2015 Fairchild Semiconductor Corporation
FSBB20CH60D Rev. 1.0
11
www.fairchildsemi.com
11 Page | ||
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| PDF Descargar | [ Datasheet FSBB20CH60D.PDF ] | |
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