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Número de pieza | FNF51560TD1 | |
Descripción | Motion SPM 55 module | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! FNF51560TD1
Motion SPM® 55 Series
October 2015
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 15 A 3-Phase IGBT Inverter Including Control
IC for Gate Drive and Protections
• Low-Loss, Short-Circuit Rated IGBTs
• Built-In Bootstrap Diodes in HVIC
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Active-HIGH interface, works with 3.3 / 5 V Logic,
Schmitt-trigger Input
• HVIC for Gate Driving, Under-Voltage and Short-Cir-
cuit Current Protection
• Fault Output for Under-Voltage and Short-Circuit Cur-
rent Protection
• Inter-Lock Function to Prevent Short-Circuit
• Shut-Down Input
• HVIC Temperature-Sensing Built-In for Temperature
Monitoring
• Optimized for 15 kHz Switching Frequency
• Isolation Rating: 1500 Vrms / min.
General Description
FNF51560TD1 is a Motion SPM 55 module providing a
fully-featured, high-performance inverter output stage for
AC Induction, BLDC, and PMSM motors. These modules
integrate optimized gate drive of the built-in IGBTs to
minimize EMI and losses, while also providing multiple
on-module protection features including under-voltage
lockouts, inter-lock function, over-current shutdown,
thermal monitoring of drive IC, and fault reporting. The
built-in, high-speed HVIC requires only a single supply
voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's robust short-
circuit-rated IGBTs. Separate negative IGBT terminals
are available for each phase to support the widest
variety of control algorithms.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9096 - Smart Power Module, Motion SPM® 55
Series User’s Guide
• AN-9097 - SPM® 55 Packing Mounting Guidance
Figure 1. 3D Package Drawing
(Click to Activate 3D Content)
Package Marking and Ordering Information
Device
FNF51560TD1
Device Marking
FNF51560TD1
Package
SPMFA-A20
Packing Type
RAIL
Quantity
13
©2015 Fairchild Semiconductor Corporation
FNF51560TD1 Rev. 1.1
1
www.fairchildsemi.com
1 page Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
VPN
VPN(Surge)
VCES
* ± IC
* ± ICP
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Applied between P - NU, NV, NW
Applied between P - NU, NV, NW
TC = 25°C, TJ < 150°C
TC = 25°C, TJ < 150°C, Under 1 ms Pulse
Width
* PC Collector Dissipation
TJ Operating Junction Temperature
TC = 25°C per Chip
(Note 5)
Note:
5. The maximum junction temperature rating of the power chips integrated within the Motion SPM® 55 product is 150C.
Rating
450
500
600
15
30
22
-40 ~ 150
Unit
V
V
V
A
A
W
°C
Control Part
Symbol
Parameter
VDD Control Supply Voltage
VBS High-Side Control Bias Voltage
VIN Input Signal Voltage
VF Fault Supply Voltage
* IF Fault Current
VSC Current Sensing Input Voltage
Total System
Symbol
Parameter
VPN(PROT) Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
TSTG
VISO
Storage Temperature
Isolation Voltage
Connect Pins to Heat Sink Plate
Conditions
Rating
Applied between VDD - COM
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
Applied between VF - COM
Sink Current at VF pin
Applied between CSC - COM
20
20
-0.3 ~ VDD +0.3
-0.3 ~ VDD +0.3
5
-0.3 ~ VDD +0.3
Unit
V
V
V
V
mA
V
Conditions
VDD = VBS = 13.5 ~ 16.5 V
TJ = 150°C, Non-Repetitive, < 2 s
AC 60 Hz, Sinusoidal, 1 Minute
Rating
400
-40 ~ 125
1500
Unit
V
°C
Vrms
Thermal Resistance
Symbol
Parameter
Conditions
Min.
Rth(j-c)Q
Rth(j-c)F
Junction to Case Thermal Resistance
(Note 7)
Inverter IGBT part (per 1 / 6 module)
Inverter FWD part (per 1 / 6 module)
-
-
Note:
6. For Marking “ * “, These Value had been made an acquisition by the calculation considered to design factor.
7. For the measurement point of case temperature (TC), please refer to Figure 2.
Typ.
-
-
Max.
5.6
6.9
Unit
°C / W
°C / W
©2015 Fairchild Semiconductor Corporation
FNF51560TD1 Rev. 1.1
5
www.fairchildsemi.com
5 Page Hin
Lin
Ho
d1
Lo
/Fo
d3 d4 d5
d2
Hin : High-side Input Signal
Lin : Low-side Input Signal
Ho : High-side IGBT Gate Voltage
Lo : Low-side IGBT Gate Voltage
/Fo : Fault Output
d1 : High Side First - Input - First - Output Mode
d2 : Low Side Noise Mode : No Lo
d3 : High Side Noise Mode : No Ho
d4 : Low Side First - Input - First - Output Mode
d5 : In - Phase Mode : No Ho
Figure 12. Inter-Lock Function
H IN
L IN
HO
LO
CSC
S o ft O ff
O ver-C urrent
D e te c tio n
VF
A c tiva te d b y n e xt
in p u t a fte r fa u lt c le a r
N o O utput
S m art Turn - o ff
HIN : High-side Input Signal
LIN : Low-side Input Signal
HO : High-Side Output Signal
LO : Low-Side Output Signal
CSC : Over Current Detection Input
VF : Fault Out Function
Figure 13. Fault-Out Function By Over Current Protection
©2015 Fairchild Semiconductor Corporation
FNF51560TD1 Rev. 1.1
11
www.fairchildsemi.com
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet FNF51560TD1.PDF ] |
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