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PDF FNF51060TD1 Data sheet ( Hoja de datos )

Número de pieza FNF51060TD1
Descripción Motion SPM 55 module
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FNF51060TD1
Motion SPM® 55 Series
September 2015
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 10 A 3-Phase IGBT Inverter Including Control
IC for Gate Drive and Protections
• Low-Loss, Short-Circuit Rated IGBTs
• Built-In Bootstrap Diodes in HVIC
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Active-HIGH interface, works with 3.3 / 5 V Logic,
Schmitt-trigger Input
• HVIC for Gate Driving, Under-Voltage and Short-Cir-
cuit Current Protection
• Fault Output for Under-Voltage and Short-Circuit Cur-
rent Protection
• Inter-Lock Function to Prevent Short-Circuit
• Shut-Down Input
• HVIC Temperature-Sensing Built-In for Temperature
Monitoring
• Optimized for 15 - 20 kHz Switching Frequency
• Isolation Rating: 1500 Vrms / min.
General Description
FNF51060TD1 is a Motion SPM 55 module providing a
fully-featured, high-performance inverter output stage for
AC Induction, BLDC, and PMSM motors. These modules
integrate optimized gate drive of the built-in IGBTs to
minimize EMI and losses, while also providing multiple
on-module protection features including under-voltage
lockouts, inter-lock function, over-current shutdown,
thermal monitoring of drive IC, and fault reporting. The
built-in, high-speed HVIC requires only a single supply
voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's robust short-
circuit-rated IGBTs. Separate negative IGBT terminals
are available for each phase to support the widest
variety of control algorithms.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9096 - Smart Power Module, Motion SPM® 55
Series User’s Guide
• AN-9097 - SPM® 55 Packing Mounting Guidance
Figure 1. 3D Package Drawing
(Click to Activate 3D Content)
Package Marking and Ordering Information
Device
FNF51060TD1
Device Marking
FNF51060TD1
Package
SPMFA-A20
Packing Type
RAIL
Quantity
13
©2015 Fairchild Semiconductor Corporation
FNF51060TD1 Rev. 1.0
1
www.fairchildsemi.com

1 page




FNF51060TD1 pdf
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
VPN
VPN(Surge)
VCES
* ± IC
* ± ICP
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Applied between P - NU, NV, NW
Applied between P - NU, NV, NW
TC = 25°C, TJ 150°C
TC = 25°C, TJ 150°C, Under 1 ms Pulse
Width
* PC Collector Dissipation
TJ Operating Junction Temperature
TC = 25°C per Chip
(Note 5)
Note:
5. The maximum junction temperature rating of the power chips integrated within the Motion SPM® 55 product is 150C.
Rating
450
500
600
10
20
21
-40 ~ 150
Unit
V
V
V
A
A
W
°C
Control Part
Symbol
Parameter
VDD Control Supply Voltage
VBS High-Side Control Bias Voltage
VIN Input Signal Voltage
VF Fault Supply Voltage
* IF Fault Current
VSC Current Sensing Input Voltage
Conditions
Rating
Applied between VDD - COM
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
Applied between VF - COM
Sink Current at VF pin
Applied between CSC - COM
20
20
-0.3 ~ VDD +0.3
-0.3 ~ VDD +0.3
5
-0.3 ~ VDD +0.3
Unit
V
V
V
V
mA
V
Total System
Symbol
Parameter
VPN(PROT) Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
TSTG
VISO
Storage Temperature
Isolation Voltage
Connect Pins to Heat Sink Plate
Conditions
VDD = VBS = 13.5 ~ 16.5 V
TJ = 150°C, Non-Repetitive, < 2 s
AC 60 Hz, Sinusoidal, 1 Minute
Rating
400
-40 ~ 125
1500
Unit
V
°C
Vrms
Thermal Resistance
Symbol
Parameter
Conditions
Min.
Rth(j-c)Q
Rth(j-c)F
Junction to Case Thermal Resistance
(Note 7)
Inverter IGBT part (per 1 / 6 module)
Inverter FWD part (per 1 / 6 module)
-
-
Note:
6. For Marking “ * “, These Value had been made an acquisition by the calculation considered to design factor.
7. For the measurement point of case temperature (TC), please refer to Figure 2.
Typ.
-
-
Max.
5.9
7.6
Unit
°C / W
°C / W
©2015 Fairchild Semiconductor Corporation
FNF51060TD1 Rev. 1.0
5
www.fairchildsemi.com

5 Page





FNF51060TD1 arduino
Hin
Lin
Ho
d1
Lo
/Fo
d3 d4 d5
d2
Hin : High-side Input Signal
Lin : Low-side Input Signal
Ho : High-side IGBT Gate Voltage
Lo : Low-side IGBT Gate Voltage
/Fo : Fault Output
d1 : High Side First - Input - First - Output Mode
d2 : Low Side Noise Mode : No Lo
d3 : High Side Noise Mode : No Ho
d4 : Low Side First - Input - First - Output Mode
d5 : In - Phase Mode : No Ho
Figure 12. Inter-Lock Function
H IN
L IN
HO
LO
CSC
S o ft O ff
O ver-C urrent
D e te c tio n
VF
A c tiva te d b y n e xt
in p u t a fte r fa u lt c le a r
N o O utput
S m art Turn - o ff
HIN : High-side Input Signal
LIN : Low-side Input Signal
HO : High-Side Output Signal
LO : Low-Side Output Signal
CSC : Short-circuit Current Detection Input
VF : Fault Out Function
Figure 13. Fault-Out Function By Over Current Protection
©2015 Fairchild Semiconductor Corporation
FNF51060TD1 Rev. 1.0
11
www.fairchildsemi.com

11 Page







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