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PDF FJPF2145 Data sheet ( Hoja de datos )

Número de pieza FJPF2145
Descripción NPN Power Transistor
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FJPF2145 Hoja de datos, Descripción, Manual

April 2013
FJPF2145
ESBCRated NPN Power Transistor
ESBC Features (FDC655 MOSFET)
VCS(ON)
0.21 V
IC Equiv. RCS(ON)(1)
2 A 0.105 Ω
• Low Equivalent On Resistance
• Very Fast Switch: 150 kHz
• Wide RBSOA: Up to 1100 V
• Avalanche Rated
• Low Driving Capacitance, no Miller Capacitance
• Low Switching Losses
• Reliable HV Switch: No False Triggering due to
High dv/dt Transients
Applications
• High-Voltage, High-Speed Power Switches
• Emitter-Switched Bipolar/MOSFET Cascode
(ESBC)
• Smart Meters, Smart Breakers, SMPS,
HV Industrial Power Supplies
• Motor Drivers and Ignition Drivers
Description
The FJPF2145 is a low-cost, high-performance power
switch designed to provide the best performance when
used in an ESBCconfiguration in applications such as:
power supplies, motor drivers, smart grid, or ignition
switches. The power switch is designed to operate up to
1100 volts and up to 5 amps, while providing exception-
ally low on-resistance and very low switching losses.
The ESBCswitch can be driven using off-the-shelf
power supply controllers or drivers. The ESBCMOS-
FET is a low-voltage, low-cost, surface-mount device that
combines low-input capacitance and fast switching. The
ESBCconfiguration further minimizes the required driv-
ing power because it does not have Miller capacitance.
The FJPF2145 provides exceptional reliability and a large
operating range due to its square reverse-bias-safe-oper-
ating-area (RBSOA) and rugged design. The device is
avalanche rated and has no parasitic transistors, so is not
prone to static dv/dt failures.
The power switch is manufactured using a dedicated
high-voltage bipolar process and is packaged in a high-
voltage TO-220F package.
1 TO-220F
1.Base 2.Collector 3.Emitter
Figure 1. Pin Configuration
C2
1
B
E3
Figure 2. Internal Schematic Diagram
C
B FJPF2145
FDC655
G
S
Figure 3. ESBC Configuration(2)
Ordering Information
Part Number
FJPF2145TU
Marking
J2145
Package
TO-220F
Notes:
1. Figure of Merit.
2. Other Fairchild MOSFETs can be used in this ESBC application.
© 2013 Fairchild Semiconductor Corporation
FJPF2145 Rev. 1.0.0
1
Packing Method
TUBE
www.fairchildsemi.com

1 page




FJPF2145 pdf
Typical Performance Characteristics (Continued)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
IC = 0.4 A
0.4 IC = 1 A
0.2 IC = 2 A
IC = 3 A
0.0
0.01
0.1
IB [mA], BASE CURRENT
1
Figure 10. Typical Collector Saturation Voltage
150
HFE=5, 10, TJ = 25oC, L=166 uH, SRF=684 KHz
125
tf hfe = 5 Common Emitter
100
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
75
50
25
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
IC [A], COLLECTOR CURRENT
Figure 12. Inductive Load Collector Current
Fall - Time (tf)
180
HFE=5, 10, TJ = 25oC, L=166 uH, SRF=684 KHz
160
140
tf hfe = 5 Common Emitter
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
120
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
IC [A], COLLECTOR CURRENT
Figure 14. Inductive Load Collector Voltage
Fall - Time (tf)
1000
100
10
1
1 10 100 1000
COLLECTOR-BASE VOLTAGE[V]
Figure 11. Capacitance
1.6 HFE = 5, 10, TJ = 25oC, L=166 uH SRF = 684 KHz, 2IB1=IB2, No peaking
1.4
1.2
tf hfe = 5 Common Emitter
1.0
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
0.8
0.6
0.4
0.2
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
IC [A], COLLECTOR CURRENT
Figure 13. Inductive Load Collector Current
Storage - Time (tstg)
500 HFE=5, 10, TJ = 25oC, L=166 uH, SRF=684 KHz
450
400
350
tf hfe = 5 Common Emitter
300 tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
250 tf hfe = 10 ESBC
200
150
100
50
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
IC [A], COLLECTOR CURRENT
Figure 15. Inductive Load Collector Voltage
Rise - Time (tr)
© 2013 Fairchild Semiconductor Corporation
FJPF2145 Rev. 1.0.0
5
www.fairchildsemi.com

5 Page





FJPF2145 arduino
Physical Dimensions
A
3.40
3.20
16.00
15.60
TO-220F
B
10.36
9.96
7.00
3.28
3.08
6.88
6.48
1 X 45°
B
2.74
2.34
0.70
B
16.07
15.67
13
2.14
10.05
9.45
2.54
1.47 MAX
0.90
0.70
0.50 M A
2.96
2.56
30°
0.45
0.25
2.54
B
0.60
0.45
B
4.90
4.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. DRAWING FILE NAME: TO220M03REV1
Figure 34. TO-220, MOLDED, 3-LEAD, FULL PACK EIAJ SC91, STRAIGHT LEAD
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/dwg/TO/TO220M03.pdf.
© 2013 Fairchild Semiconductor Corporation
FJPF2145 Rev. 1.0.0
11
www.fairchildsemi.com

11 Page







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