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PDF FJP2145 Data sheet ( Hoja de datos )
| Número de pieza | FJP2145 | |
| Descripción | NPN Power Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FJP2145 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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March 2015
FJP2145
ESBC™ Rated NPN Power Transistor
ESBC Features (FDC655 MOSFET)
VCS(ON)
0.21 V
IC Equiv. RCS(ON)(1)
2 A 0.105 Ω
• Low Equivalent On Resistance
• Very Fast Switch: 150 kHz
• Wide RBSOA: Up to 1100 V
• Avalanche Rated
• Low Driving Capacitance, No Miller Capacitance
• Low Switching Losses
• Reliable HV Switch: No False Triggering due to
High dv/dt Transients
Applications
• High-Voltage, High-Speed Power Switch
• Emitter-Switched Bipolar/MOSFET Cascode
(ESBC™)
• Smart Meters, Smart Breakers, SMPS,
HV Industrial Power Supplies
• Motor Drivers and Ignition Drivers
Description
The FJP2145 is a low-cost, high-performance power
switch designed to provide the best performance when
used in an ESBC™ configuration in applications such as:
power supplies, motor drivers, smart grid, or ignition
switches. The power switch is designed to operate up to
1100 volts and up to 5 amps, while providing exception-
ally low on-resistance and very low switching losses.
The ESBC™ switch can be driven using off-the-shelf
power supply controllers or drivers. The ESBC™ MOS-
FET is a low-voltage, low-cost, surface-mount device that
combines low-input capacitance and fast switching. The
ESBC™ configuration further minimizes the required driv-
ing power because it does not have Miller capacitance.
The FJP2145 provides exceptional reliability and a large
operating range due to its square reverse-bias-safe-oper-
ating-area (RBSOA) and rugged design. The device is
avalanche rated and has no parasitic transistors, so is not
prone to static dv/dt failures.
The power switch is manufactured using a dedicated
high-voltage bipolar process and is packaged in a high-
voltage TO-220 package.
1 TO-220
1.Base 2.Collector 3.Emitter
Figure 1. Pin Configuration
C2
1
B
E3
Figure 2. Internal Schematic Diagram
C
B FJP2145
FDC655
G
S
Figure 3. ESBC Configuration(2)
Ordering Information
Part Number
Marking
Package
FJP2145TU
J2145
TO-220
Notes:
1. Figure of Merit.
2. Other Fairchild MOSFETs can be used in this ESBC application.
Packing Method
TUBE
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
5
IB = 1 A
4
0.9 A
0.8 A
0.7 A
3
0.6 A
0.5 A
0.4 A
0.3 A
2 0.2 A
0.1 A
1
0
01234567
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Static Characteristics
10
HFE = 3
1
0.1
0.01
1E-3
0.01
0.1
125 oC
25 oC
- 25 oC
- 40 oC
1 10
I [A], COLLECTOR CURRENT
C
Figure 6. Collector-Emitter Saturation Voltage
hFE = 3
10
HFE = 10
1
0.1
0.01
1E-3
0.01
0.1
125 oC
25 oC
-25 oC
-40 oC
1 10
I [A], COLLECTOR CURRENT
C
Figure 8. Collector-Emitter Saturation Voltage
hFE = 10
100
VCE = 5 V
10
125 oC
25 oC
-25 oC
-40 oC
1
1E-3 0.01
0.1
1
IC [A], COLLECTOR CURRENT
Figure 5. DC Current Gain
10
HFE = 5
10
1
0.1
0.01
1E-3
0.01
0.1
125 oC
25 oC
-25 oC
-40 oC
1 10
I [A], COLLECTOR CURRENT
C
Figure 7. Collector-Emitter Saturation Voltage
hFE = 5
10
HFE = 20
1
0.1
0.01
1E-3
0.01
0.1
125 oC
25 oC
1 10
I [A], COLLECTOR CURRENT
C
Figure 9. Collector-Emitter Saturation Voltage
hFE = 20
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
5
www.fairchildsemi.com
5 Page 
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Figure 30. 30 W; Secondary-Side Regulation: 3 Capacitor Input; Quasi Resonant
Driving ESBC Switches
Fairchild
Proprietary
Figure 31. VCC Derived
Figure 32. VBIAS Supply Derived
Figure 33. Proportional Drive
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
11
www.fairchildsemi.com
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet FJP2145.PDF ] | |
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