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PDF FJAFS1510A Data sheet ( Hoja de datos )
| Número de pieza | FJAFS1510A | |
| Descripción | NPN Power Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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FJAFS1510A
ESBC™ Rated NPN Power Transistor
November 2012
Applications
• High-Voltage and High-Speed Power Switches
• Emitter-Switched Bipolar/MOSFET Cascodes
(ESBC™)
• Smart Meters, Smart Breakers, SMPS,
HV Industrial Power Supplies
• Motor Drivers and Ignition Drivers
ESBC Features (FDC655 MOSFET)
VCS(ON)
0.426 V
IC Equiv. RCS(ON)
6 A 0.071 Ω(1)
• Low Equivalent On Resistance
• Very Fast Switch: 150 kHz
• Avalanche Rated
• Low Driving Capacitance, No Miller Capacitance
• Low Switching Losses
• Reliable HV switch: No False Triggering due to
High dv/dt Transients
Description
The FJAFS1510A is a low-cost, high-performance power
switch designed to provide optimal performance when
used in an ESBC™ configuration in applications such as:
power supplies, motor drivers, smart grid, or ignition
switches. The power switch is designed to operate up to
1550 volts and up to 6amps, while providing exceptionally
low on-resistance and very low switching losses.
The ESBC™ switch is designed to be driven using off-
the-shelf power supply controllers or drivers. The
ESBC™ MOSFET is a low-voltage, low-cost, surface-
mount device that combines low-input capacitance and
fast switching. The ESBC™ configuration further mini-
mizes the required driving power because it does not
have Miller capacitance.
The FJAFS1510A provides exceptional reliability and a
large operating range due to its square Reverse-Bias-
Safe-Operating-Area (RBSOA) and rugged design. The
device is avalanche rated and has no parasitic transistors
so is not prone to static dv/dt failures.
The power switch is manufactured using a dedicated
high-voltage bipolar process and is packaged in a high-
voltage TO-3PF package.
1 TO-3PF
1.Base 2.Collector 3.Emitter
Figure 1. Pin Configuration
C2
1
B
E3
C
B FJAFS1510A
FDC655
G
S
Figure 2. Internal Schematic Diagram Figure 3. ESBC Configuration(2)
Ordering Information
Part Number
FJAFS1510ATU
Marking
J1510A
Package
TO-3PF
Notes:
1. Figure of Merit.
2. Other Fairchild MOSFETs can be used in this ESBC application.
Packing Method
TUBE
© 2012 Fairchild Semiconductor Corporation
FJAFS1510A Rev. A2
1
Remarks
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
14
V = 5V
CE
12
10
8
6
4
T = 1250C
A
250C
- 250C
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V [V], BASE-EMITTER VOLTAGE
BE
Figure 10. Base-Emitter On Voltage
250
t = 25oC L=1mH SRF=350KHz
225 A
200
175
150
125
h =10 common emitter
FE
100
h =5 commom emitter
FE
75
50
h =10 ESBC
FE
25
h =5 ESBC
FE
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
I [A], COLLECTOR CURRENT
C
Figure 12. Inductive Load
Collector Current Fall-time (tf)
360
t = 25oC L=1mH SRF=350KHz
A
320
280
240
h =10 common emitter
FE
200 h =5 commom emitter
FE
160
h =10 ESBC
FE
120
80
h =5 ESBC
FE
40
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
I [A], COLLECTOR CURRENT
C
Figure 14. Inductive Load
Collector Voltage Fall-time (tf)
1000
100
C (Emitter Open)
ob
C (Emitter Grounded)
ob
10
1 10 100 1000
V [V], Collector-Base Voltage
CB
Figure 11. Capacitance
2.5
t = 25oC L=1mH SRF=350KHz
A
2.0
h =5 common emitter
FE
1.5 h =10 commom emitter
FE
1.0 h =5 ESBC
FE
h =10 ESBC
FE
0.5
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
I [A], COLLECTOR CURRENT
C
Figure 13. Inductive Load
Collector Current Storage time (tstg)
240
t = 25oC L=1mH SRF=350KHz
A
200
h =5 ESBC
FE
160 h =10 common emitter
FE
120
80
h =5 commom emitter
FE
40
h =10 ESBC
FE
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
I [A], COLLECTOR CURRENT
C
Figure 15. Inductive Load
Collector Voltage Rise-time (tr)
© 2012 Fairchild Semiconductor Corporation
FJAFS1510A Rev. A2
5
www.fairchildsemi.com
5 Page 
Physical Dimensions
TO-3PF
4.60
4.40
15.70
15.30
9.90
7.75
3.80
3.40
10.20
9.80
16.70
16.30 14.70
14.30
26.70
26.30
16.70
16.30
3.20
2.80
23.20
22.80
1.93
1
15.00 4.20
14.60 3.80
5.75
5.15
3.50
3.10
23
2.70
2.30
2.20
1.80
(3X)
0.95
0.65
(3X)
2.20
1.80
3.50
3.10
5.75
5.15
5.70
5.30
1.10
0.80
NOTES:
A. THIS PACKAGE CONFORMS TO SC94
JEITA PACKAGING STANDARD.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
D. PIN 2 CONNECTS TO DAP.
E. DRAWING FILE NAME: TO3PFA03REV1
Figure 34. TO-3PF, 3 Leads, Molded, Full Pack
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/products/discrete/pdf/to3pf_tr.pdf.
© 2012 Fairchild Semiconductor Corporation
FJAFS1510A Rev. A2
11
www.fairchildsemi.com
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