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PDF FJAFS1720 Data sheet ( Hoja de datos )
| Número de pieza | FJAFS1720 | |
| Descripción | NPN Power Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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January 2013
FJAFS1720
ESBC™ Rated NPN Power Transistor
ESBC Features (FDS8817 MOSFET)
VCS(ON)
0.304 V
IC
10 A
Equiv. RCS(ON)
0.0304 Ω
• Low Equivalent On Resistance
• Very Fast Switch: 150 kHz
• Squared RBSOA: Up to 1700 V
• Avalanche Rated
• Low Driving Capacitance, No Miller Capacitance
• Low Switching Losses
• Reliable HV Switch: No False Triggering due to
High dv/dt Transients
Applications
• High-Voltage and High-Speed Power Switches
• Emitter-Switched Bipolar/MOSFET Cascode
(ESBC™)
• Smart Meters, Smart Breakers, SMPS,
HV Industrial Power Supplies
• Motor Drivers and Ignition Drivers
Description
The FJAFS1720 is a low-cost, high-performance power
switch designed to provide the best performance when
used in an ESBC™ configuration in applications such as:
power supplies, motor drivers, smart grid, or ignition
switches. The power switch is designed to operate up to
1700 volts and up to 12 amps, while providing exception-
ally low on-resistance and very low switching losses.
The ESBC™ switch is designed to be driven using off-the-
shelf power supply controllers or drivers. The ESBC™
MOSFET is a low-voltage, low-cost, surface-mount
device that combines low-input capacitance and fast
switching, The ESBC™ configuration further minimizes
the required driving power because it does not have
Miller capacitance.
The FJAFS1720 provides exceptional reliability and a
large operating range due to its square reverse-bias-safe-
operating-area (RBSOA) and rugged design. The device
is avalanche rated and has no parasitic transistors, so is
not prone to static dv/dt failures.
The power switch is manufactured using a dedicated
high-voltage bipolar process and is packaged in a high-
voltage TO-3PF package.
1 TO-3PF
1.Base 2.Collector 3.Emitter
Figure 1. Pin Configuration
C2
1
B
E3
Figure 2. Internal Schematic Diagram
C
B FJAFS1720
FDS8817
G
S
Figure 3. ESBC Configuration(2)
Ordering Information
Part Number
FJAFS1720TU
Marking
J1720
Package
TO-3PF
Notes:
1. Figure of Merit.
2. Other Fairchild MOSFETs can be used in this ESBC application.
© 2012 Fairchild Semiconductor Corporation
FJAFS1720 Rev. 1.0.0
1
Packing Method
TUBE
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
16
14 VCE = 5V
12
10
8
6
4
2
125oC 25oC
- 25oC
0
0.0 0.2 0.4 0.6 0.8 1.0
VBE [V], BASE-EMITTER VOLTAGE
Figure 10. Base-Emitter On Voltage
1.2
1000
100
Cob (Emitter Open)
Cob (Emitter Grounded)
Cob (Emitter at socket)
10
1 10 100 1000
COLLECTOR-BASE VOLTAGE[V]
Figure 11. Capacitance
10000
160
144 ta = 25oC L=1mH SRF=350KHz
128
112
hfe=10 common emitter
96
hfe=5 common emitter
80
64
hfe=10 ESBC
48
hfe=5 ESBC
32
16
0
1 2 3 4 5 6 7 8 9 10 11 12
IC [A], COLLECTOR CURRENT
Figure 12. Inductive Load
Collector Current Fall-time (tf)
440
400 ta = 25oC L=1mH SRF=350KHz
360
320
280
240
200 bule line : hfe=10 common emitter
160 hfe=5 common emitter
120 hfe=10 ESBC
hfe=5 ESBC
80
40
1 2 3 4 5 6 7 8 9 10 11 12
IC [A], COLLECTOR CURRENT
Figure 14. Inductive Load
Collector Voltage Fall-time (tf)
3.0 ta = 25oC L=1mH SRF=350KHz
hfe=5 common emitter
2.5
2.0 hfe=10 common emitter
1.5 hfe=5 ESBC
1.0
hfe=10 ESBC
0.5
1 2 3 4 5 6 7 8 9 10 11 12
IC [A], COLLECTOR CURRENT
Figure 13. Inductive Load
Collector Current Storage time (tstg)
360 ta = 25oC L=1mH SRF=350KHz
320
280
240
hfe=10 common emitter
200
160
hfe=5 ESBC
120
hfe=5 common emitter
80
40
hfe=10 ESBC
0
1 2 3 4 5 6 7 8 9 10 11 12
IC [A], COLLECTOR CURRENT
Figure 15. Inductive Load
Collector Voltage Rise-time (tr)
© 2012 Fairchild Semiconductor Corporation
FJAFS1720 Rev. 1.0.0
5
www.fairchildsemi.com
5 Page 
Physical Dimensions
TO-3PF
4.60
4.40
15.70
15.30
9.90
7.75
3.80
3.40
10.20
9.80
16.70
16.30 14.70
14.30
26.70
26.30
16.70
16.30
3.20
2.80
23.20
22.80
1.93
1
15.00 4.20
14.60 3.80
5.75
5.15
3.50
3.10
23
2.70
2.30
2.20
1.80
(3X)
0.95
0.65
(3X)
2.20
1.80
3.50
3.10
5.75
5.15
5.70
5.30
1.10
0.80
NOTES:
A. THIS PACKAGE CONFORMS TO SC94
JEITA PACKAGING STANDARD.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
D. PIN 2 CONNECTS TO DAP.
E. DRAWING FILE NAME: TO3PFA03REV1
Figure 33. TO3PF, MOLDED, 3LD, FULLPACK (AG)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/dwg/TO/TO3PFA03.pdf.
© 2012 Fairchild Semiconductor Corporation
FJAFS1720 Rev. 1.0.0
11
www.fairchildsemi.com
11 Page | ||
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