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PDF FGH40T100SMD Data sheet ( Hoja de datos )

Número de pieza FGH40T100SMD
Descripción IGBT
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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February 2012
FGH40T100SMD
1000V, 40A Field Stop Trench IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) = 1.9V(Typ.) @ IC = 40A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• UPS, welder, solar application
• PFC application
General Description
Using Novel Field Stop Trench IGBT Technology, Fairchild’s
new series of Field Stop Trench IGBTs offer the optimum per-
formance for hard switching application such as UPS, welder,
solar applications.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Pulsed Diode Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 125oC
@ TC = 25oC
@ TC = 25oC
@ TC = 125oC
@ TC = 25oC
@ TC = 25oC
@ TC = 125oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
RqJC(IGBT)
RqJC(Diode)
RqJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
C
G
E
Ratings
1000
± 20
80
40
120
80
40
120
333
111
-55 to +175
-55 to +175
300
Typ.
-
-
-
Max.
0.45
0.8
40
Units
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
oC/W
©2012 Fairchild Semiconductor Corporation
FGH40T100SMD Rev. C2
1
www.fairchildsemi.com

1 page




FGH40T100SMD pdf
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20 Common Emitter
TC = 25oC
16
12
8
40A
4
80A
IC = 20A
0 4 8 12 16
Gate-Emitter Voltage, VGE [V]
20
Figure 9. Capacitance Characteristics
10000
Cies
1000
Coes
100
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
10
0.1 1 10
Collector-Emitter Voltage, VCE [V]
Cres
30
Figure 11. SOA Characteristics
300
100 10ms
100ms
1ms
10 10 ms
DC
1
*Notes:
0.1 1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0.01
1 10 100 1000 2000
Collector-Emitter Voltage, VCE [V]
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
TC = 175oC
16
12
8
40A
4
80A
IC = 20A
0
4 8 12 16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
15
12
400V
200V
VCC = 600V
9
6
3
Common Emitter
TC = 25oC
0
0 50 100 150 200 250 300
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
200
100
10
0
tr
td(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG [W]
50
FGH40T100SMD Rev. C2
5
www.fairchildsemi.com

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