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Número de pieza | FDMS86163P | |
Descripción | P-Channel PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDMS86163P (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! FDMS86163P
P-Channel PowerTrench® MOSFET
-100 V, -50 A, 22 mΩ
Features
Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A
Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A
Very low RDS-on mid voltage P-channel silicon technology
optimised for low Qg
This product is optimised for fast switching applications as
well as load switch applications
100% UIL tested
RoHS Compliant
May 2014
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Applications
Active Clamp Switch
Load Switch
Top Bottom
Pin 1
SS
S
S
GS
Power 56
D
D
D
D
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
-100
±25
-50
-7.9
-100
486
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.2
50
°C/W
Device Marking
FDMS86163P
Device
FDMS86163P
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2014 Fairchild Semiconductor Corporation
FDMS86163P Rev.C
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.005
10-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
1
©2014 Fairchild Semiconductor Corporation
FDMS86163P Rev.C
5
www.fairchildsemi.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FDMS86163P.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDMS86163P | P-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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