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PDF FDMS86181 Data sheet ( Hoja de datos )

Número de pieza FDMS86181
Descripción N-Channel Shielded Gate PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMS86181 Hoja de datos, Descripción, Manual

FDMS86181
December 2015
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 124 A, 4.2 mΩ
Features
„ Shielded Gate MOSFET Technology
„ Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
„ Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
„ ADD
„ 50% lower Qrr than other MOSFET suppliers
„ Lowers switching noise/EMI
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
General Description
This N-Channel MV MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized to minimise on-state resistance and yet maintain
superior switching performance with best in class soft body
diode.
Applications
„ Primary DC-DC MOSFET
„ Synchronous Rectifier in DC-DC and AC-DC
„ Motor Drive
„ Solar
Top
Pin 1
Bottom
Pin 1
S
S
S
G
Power 56
D
D
D
D
S
S
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
100
±20
124
78
44
510
337
125
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.0
50
°C/W
Device Marking
FDMS86181
Device
FDMS86181
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2015 Fairchild Semiconductor Corporation
FDMS86181 Rev. 1.1
1
www.fairchildsemi.com

1 page




FDMS86181 pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
0.001
10-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t1
t2
NOTES:
ZθJC(t) = r(t) x RθJC
RθJC = 1.0 oC/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
1
©2015 Fairchild Semiconductor Corporation
FDMS86181 Rev. 1.1
5
www.fairchildsemi.com

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