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PDF KTC3876S Data sheet ( Hoja de datos )
| Número de pieza | KTC3876S | |
| Descripción | NPN Transistors | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
NPN Transistors
KTC3876 (KTC3876S)
■ Features
● Excellent hFE Linearity
● Complementary to KTA1505/KTA1505S
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Tstg
Rating
35
30
5
500
50
150
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
VCBO
VCEO
VEBO
Ic= 100uA， IE= 0
Ic= 1 mA，IB=0
IE= 100uA， IC= 0
Collector-base cut-off current
ICBO VCB= 35V , IE= 0
Emitter cut-off current
IEBO VEB= 5V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=100mA, IB=10mA
Base - emitter saturation voltage
VBE(sat) IC=100mA, IB=10mA
Base - emitte voltage
VBE VCE= 1V, IC=100mA
VCE= 1V, IC=100mA
DC current gain
hFE
VCE= 6V, IC=400mA
O
Y
Collector output capacitance
Cob VCB= 6V, IE= 0,f=1MHz
Transition frequency
fT VCE= 6V, IC= 20mA
■ Classification of hfe(1)
Type
KTC3876-O
KTC3876-Y
KTC3876-G
Range
70-140
120-240
200-400
Marking
WO
WY
WG
Unit
V
mA
mW
℃
Min Typ Max Unit
35
30 V
5
0.1
uA
0.1
0.25
1.2 V
1
70 400
25
40
7 pF
300 MHz
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