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PDF DK48N75 Data sheet ( Hoja de datos )

Número de pieza DK48N75
Descripción N-Channel Trench Process Power MOSFET
Fabricantes Thinki Semiconductor 
Logotipo Thinki Semiconductor Logotipo



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No Preview Available ! DK48N75 Hoja de datos, Descripción, Manual

DK48N75
®
Pb Free Plating Product
DK48N75
Pb
70V,68A N-Channel Trench Process Power MOSFET
General Description
The DK48N75 is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged EAS
capability and ultra low RDS(ON) is suitable for PWM, load
switching especially for E-Bike controller applications.
Features
VDS=70VID=68A@ VGS=10V
RDS(ON)<8.4mΩ @ VGS=10V
Special Designed for E-Bike Controller Application
Ultra Low On-Resistance
High UIS and UIS 100% Test
Application
48V E-Bike Controller Applications
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
DK48N75
(TO-220 HeatSink)
G DS
Schematic Diagram
VDS = 70 V
ID = 68A
RDS(ON) = 7mΩ
Table 1. Absolute Maximum Ratings (TA=25)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
ID (DC)
IDM (pluse)
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
dv/dt
Peak Diode Recovery Voltage
PD Maximum Power Dissipation(Tc=25)
Derating Factor
EAS Single Pulse Avalanche Energy (Note 2)
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25,VDD=33V,VG=10V,ID=37A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Value
70
±25
68
47.6
272
30
85
0.57
342
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/
mJ
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DK48N75 pdf
DK48N75
Figure7. BVDSS vs Junction Temperature
®
Figure8. VGS(th) vs Junction Temperature
Temperature(℃)
Temperature(℃)
Figure9. Gate Charge Waveforms
Temperature(℃)
Figure10. Capacitance
Qg Gate Charge (nC)
VDS Drain-Source Voltage (V)
Figure11. Normalized Maximum Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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