|
|
PDF DK48N18 Data sheet ( Hoja de datos )
| Número de pieza | DK48N18 | |
| Descripción | N-Channel Trench Process Power MOSFET | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de DK48N18 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
DK48N18
®
Pb Free Plating Product
DK48N18
Pb
70V,158A N-Channel Trench Process Power MOSFET
General Description
The DK48N18 is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged EAS
capability and ultra low RDS(ON) is suitable for PWM, load
switching especially for E-Bike controller applications.
Features
● VDS=70V；ID=158A@ VGS=10V；
RDS(ON)<4.2mΩ @ VGS=10V
● Special Designed for E-Bike Controller Application
● Ultra Low On-Resistance
● High UIS and UIS 100% Test
Application
● 48V E-Bike Controller Applications
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
DK48N18
(TO-220 HeatSink)
G DS
Schematic Diagram
VDSS = 70V
IDSS = 158A
RDS(ON) = 3.5mΩ
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V）
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
ID (DC)
IDM (pluse)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed (Note 1)
dv/dt
Peak Diode Recovery Voltage
PD Maximum Power Dissipation(Tc=25℃)
Derating Factor
EAS Single Pulse Avalanche Energy (Note 2)
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25℃,VDD=33V,VG=10V,ID=72.5A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Value
70
±25
158
110
632
30
231
1.54
1300
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/℃
mJ
℃
Page 1/5
http://www.thinkisemi.com/
1 page  
DK48N18
®
Figure7. BVDSS vs Junction Temperature
Figure8. VGS(th) vs Junction Temperature
Temperature（℃）
Temperature（℃）
Figure9. Gate Charge Waveforms
10
8
8000
7000
6000
Figure10. Capacitance
6 5000
4000
4
3000
2 2000
0 1000
160 0 0 5 10 15 20 25
VDS Drain-Source Voltage (V)
Figure11. Normalized Maximum Transient Thermal Impedance
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Square Wave Pluse Duration(sec)
Page 5/5
http://www.thinkisemi.com/
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DK48N18.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| DK48N18 | N-Channel Trench Process Power MOSFET | Thinki Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |