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Número de pieza | ST3407SRG | |
Descripción | P Channel Enhancement Mode MOSFET | |
Fabricantes | Stanson Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ST3407SRG (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! ST3407SRG
P Channel Enhancement Mode MOSFET
-3.6A
DESCRIPTION
ST3407SRG is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
3
D
GS
12
FEATURE
-30V/-4.0A, RDS(ON) = 54mΩ (Typ.)
@VGS = -10V
-30V/-3.2A, RDS(ON) = 72mΩ
@VGS = -4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and
maximum DC current capability
SOT-23 package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
3
A7YA
12
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3407SRG 2006. V1
1 page ST3407SRG
P Channel Enhancement Mode MOSFET
-3.6A
TYPICAL CHARACTERICTICS (25℃ unless otherwise noted)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3407SRG 2006. V1
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet ST3407SRG.PDF ] |
Número de pieza | Descripción | Fabricantes |
ST3407SRG | P Channel Enhancement Mode MOSFET | Stanson Technology |
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