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PDF KTD2060 Data sheet ( Hoja de datos )
| Número de pieza | KTD2060 | |
| Descripción | TRIPLE DIFFUSED NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KTD2060
TRIPLE DIFFUSED NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
Good Linearity of hFE.
Complementary to KTB1368.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
80
80
5
4
0.4
25
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
LL
M
DD
NN
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2
F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5
R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=80V, IE=0
Emitter Cut-off Current
IEBO VEB=5V, IC=0
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=50mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO
IC=10mA, IB=0
DC Current Gain
hFE(1) (Note)
hFE(2)
VCE=5V, IC=0.5A
VCE=5V, IC=3A
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
VCE(sat)
VBE
fT
IC=3A, IB=0.3A
VCE=5V, IC=3A
VCE=5V, IC=0.5A
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Note : hFE(1) Classification R:40 80, O:70 140, Y:120 240
MIN.
-
-
80
5
40
15
-
-
-
-
TYP.
-
-
-
-
-
50
0.45
1.0
8.0
90
MAX.
30
100
-
-
240
-
1.5
1.5
-
-
UNIT
A
A
V
V
V
V
MHz
pF
2007. 5. 22
Revision No : 2
1/2
1 page | ||
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