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PDF QN7002 Data sheet ( Hoja de datos )

Número de pieza QN7002
Descripción N-CHANNEL MOSFET FOR SWITCHING
Fabricantes Renesas 
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No Preview Available ! QN7002 Hoja de datos, Descripción, Manual

QN7002
N-CHANNEL MOSFET FOR SWITCHING
Preliminary Data Sheet
R07DS0269EJ0100
Rev.1.00
Mar 11, 2011
Description
The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven
directly by a 4.5 V power source.
Features
Directly driven by a 4.5 V power source.
Low on-state resistance
RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA)
RDS(on)2 = 3.2 Ω MAX. (VGS = 4.5 V, ID = 50 mA)
Ordering Information
Part Number
Lead Plating
Packing
Package
QN7002-T1B-AT
Pure Sn
3000p/Reel
SC-59 (Mini Mold)
Remark "-AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Remark for Agent
ORDER NUMBER “2SK4079(1)” must be used to order, instead of “QN7002”. For instance, “2SK4079(1)-T1B-AT”
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note
Total Power Dissipation
Channel Temperature
Storage Temperature
Note PW 10 μs, Duty Cycle 1%
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
60
±20
200
±800
200
150
55 to +150
V
V
mA
mA
mW
°C
°C
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD ±400 V (MIL STD; C = 100 pF, R = 1.5 kΩ, 5 times), as reference value.
R07DS0269EJ0100 Rev.1.00
Mar 11, 2011
Page 1 of 6

1 page




QN7002 pdf
QN7002
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1
Pulsed
VGS = 0 V
0.1
0.01
0.001
0 0.2 0.4 0.6 0.8 1 1.2
VF(S-D) – Source to Drain Voltage - V
Chapter Title
R07DS0269EJ0100 Rev.1.00
Mar 11, 2011
Page 5 of 6

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