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PDF BCR12CS-12LB Data sheet ( Hoja de datos )

Número de pieza BCR12CS-12LB
Descripción Triac
Fabricantes Renesas 
Logotipo Renesas Logotipo



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BCR12CS-12LB
Triac
Medium Power Use
Features
IT (RMS) : 12 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6
Outline
Preliminary Datasheet
R07DS0225EJ0400
(Previous: REJ03G0470-0300)
Rev.4.00
Dec 14, 2010
The product guaranteed maximum junction
temperature of 150°C
Non-Insulated Type
Planar Passivation Type
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
RENESAS Package code: PRSS0004AB-A
(Package name: TO-220S)
EOL PKG4
1
23
2, 4
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
Applications
Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo
systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control, solid
state relay, copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Ratings
12
120
60
5
0.5
10
2
– 40 to +150
– 40 to +150
1.3
Unit
A
A
A2s
W
W
V
A
C
C
g
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 123CNote3
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
R07DS0225EJ0400 Rev.4.00
Dec 14, 2010
Page 1 of 8

1 page




BCR12CS-12LB pdf
BCR12CS-12LB
Latching Current vs.
Junction Temperature
103
7
5
3 Distribution
2 T2+, G
102 Typical Example
7
5
3
2
101
7
5
3
2
TT22+–,,
G+
G
Typical Example
100
–40
0
40 80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140 Tj = 125°C
120
100
80 III Quadrant
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
102
7
5
3
2
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
Main Voltage
(dv/dt)c
Main Current
IT
τ
Time
VD
(di/dt)c
Time
f = 3Hz
101
7
5 Minimum
Characteristics
3 Value
2
I Quadrant
100
7
100
23
III Quadrant
5 7 101 2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Preliminary
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
60 –40 20 0 20 40 60 80 100 120 140160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
140 Tj = 150°C
120
100
80
60
40
20 I Quadrant
III Quadrant
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
102
7
5
Typical Example
Tj = 150°C
Main Voltage
(dv/dt)c
Time
VD
IT = 4A
3 τ = 500μs
2 VD = 200V
Main Current
IT
(di/dt)c
τ Time
f = 3Hz
101
7
5 I Quadrant
3 III Quadrant
2
Minimum
100
Characteristics
Value
7
100 2 3 5 7 101 2 3 5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0225EJ0400 Rev.4.00
Dec 14, 2010
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