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PDF BCR10LM-16LH Data sheet ( Hoja de datos )
| Número de pieza | BCR10LM-16LH | |
| Descripción | Triac | |
| Fabricantes | Renesas | |
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BCR10LM-16LH
Triac
Medium Power Use
Features
• IT (RMS) : 10 A
• VDRM : 800 V
• IFGTI, IRGTI, IRGT III : 50 mA or 35 mA (IGT item:1)
• High Commutation
• Viso : 1800 V
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
Preliminary Datasheet
R07DS0319EJ0100
Rev.1.00
May 18, 2011
• The Product guaranteed maximum junction
temperature 150°C
• Planar Type
• Insulated Type
• UL Recognized : File No. E223904
1
23
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Switching mode power supply, motor control, heater control, and other general purpose AC power control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Notes: 1. Gate open.
Symbol
VDRM
VDSM
Voltage class
16
800
960
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
Ratings
10
100
41.6
5
0.5
10
2
–40 to +150
–40 to +150
1.5
1800
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 103°C Note3
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1 • T2 • G terminal to case
R07DS0319EJ0100 Rev.1.00
May 18, 2011
Page 1 of 7
1 page  
BCR10LM-16LH
Holding Current vs.
Junction Temperature
103
Typical Example
102
101
–40
0
40 80 120 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140 Tj = 125°C
120
III Quadrant
100
80
I Quadrant
60
40
20
0
101 102 103 104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
102
Main Voltage
(dv/dt)c
Main Current
IT
τ
Time
VD
(di/dt)c
Time
III Quadrant
101
Minimum
Value
I Quadrant
Minimum
Value
(IGTitem1)
100
100
Typical Example
Tj = 125°C, IT = 4A
τ = 500μs,
VD = 200V, f = 3Hz
101 102
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0319EJ0100 Rev.1.00
May 18, 2011
Preliminary
Latching Current vs.
Junction Temperature
103
Distribution
T2+, G–
102 Typical Example
101
T2+, G+
T2–, G–
Typical Example
100
–40 0
40 80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
140 Tj = 150°C
120
III Quadrant
100
80
I Quadrant
60
40
20
0
101 102 103 104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
102
Main Voltage
(dv/dt)c
Main Current
IT
τ
Time
VD
(di/dt)c
Time
I Quadrant
101
III Quadrant
Typical Example
Tj = 150°C, IT = 4A
τ = 500μs,
100 VD = 200V, f = 3Hz
100 101
102
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BCR10LM-16LH.PDF ] | |
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