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PDF SB20200CT Data sheet ( Hoja de datos )

Número de pieza SB20200CT
Descripción 20A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER
Fabricantes Won-Top 
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No Preview Available ! SB20200CT Hoja de datos, Descripción, Manual

WTE
POWER SEMICONDUCTORS
SB20150CT – SB20200CT Pb
20A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER
Features
Schottky Barrier Chip
Guard Ring for Transient Protection
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
B
C
G
A
PIN1 2 3
D
Mechanical Data
Case: TO-220, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
Mounting Position: Any
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
F
P
I
H
E
L
J
K
TO-220
Dim Min
Max
A 13.90 15.90
B 9.80 10.70
C 2.54 3.43
D 3.56 4.56
E 12.70 14.73
F 0.51 0.96
G 3.55 Ø 4.09 Ø
H 5.75 6.85
I 4.16 5.00
J 2.03 2.92
K 0.30 0.65
L 1.14 1.40
P 2.29 2.79
All Dimensions in mm
PIN 1 -
PIN 3 -
+
Case, PIN 2
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@TC = 95°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@IF = 10A
@TA = 25°C
@TA = 100°C
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
Cj
Tj, TSTG
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB20150CT
SB20200CT
150 200
105 140
20
200
0.92
0.5
100
1100
-65 to +150
Unit
V
V
A
A
V
mA
pF
°C
SB20150CT – SB20200CT
1 of 4
© 2008 Won-Top Electronics

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