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PDF DMN2027UPS Data sheet ( Hoja de datos )

Número de pieza DMN2027UPS
Descripción N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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DMN2027UPS
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
20V
RDS(ON) Max
12.5mΩ @ VGS= 4.5V
19mΩ @ VGS= 2.5V
ID Max
TC = +25°C
36A
30A
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Features and Benefits
Low RDS(ON) Ensures On-State Losses Are Minimized
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Applications
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: POWERDI®5060-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.097 grams (Approximate)
POWERDI5060-8
Top View
S Pin 1
S
S
G
D
D
D
D
Bottom View
Internal Schematic
S
S
S
G
Top View
D
D
D
D
Ordering Information (Note 4)
Notes:
Part Number
DMN2027UPS-13
Case
POWERDI5060-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
POWERDI is a registered trademark of Diodes Incorporated.
DMN2027UPS
Document number: DS37940 Rev. 2 - 2
1 of 8
www.diodes.com
September 2015
© Diodes Incorporated

1 page




DMN2027UPS pdf
DMN2027UPS
0.03 1.5
0.025
0.02
0.015
0.01
0.005
VGS=2.5V, ID=8.3A
VGS=4.5V, ID=9.4A
1.2
ID=1mA
0.9
ID=250µA
0.6
0.3
0
-50 -25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 7. On-Resistance Variation with Junction
Temperature
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 8. Gate Threshold Variation vs Junction
Temperature
30
VGS=0V
25
20
15
10
5
0
0
TJ=150
TJ=125
TJ=85
TJ=25
TJ=-55
0.3 0.6 0.9
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
1.2
10000
1000
100
10
150
125
85
1 25
0.1
0
5 10 15 20
VDS, Drain-SOURCE VOLTAGE (V)
Figure 10. Typical Drain-Source Leakge Current vs
Voltage
100000
f=1MHz
4.5
4
10000
3.5
3
1000
100
Ciss
Coss
Crss
2.5
2
1.5
1
0.5
10
0
5 10 15
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
20
0
0
DMN2027UPS
Document number: DS37940 Rev. 2 - 2
5 of 8
www.diodes.com
VDS=10V, ID=9.4A
2 4 6 8 10
Qg (nC)
Figure 12. Gate Charge
12
September 2015
© Diodes Incorporated

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