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PDF RHU002N06FRA Data sheet ( Hoja de datos )
| Número de pieza | RHU002N06FRA | |
| Descripción | 4V Drive Nch MOS FET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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4V Drive Nch MOSFET
RHU002N06FRA
Structure
Silicon N-channel
MOSFET transistor
Features
1) Low on-resistance.
2) High ESD.
3) High-speed switching.
4) Low-voltage drive (4V).
5) Drive circuits can be simple.
6) Parallel use is easy.
AEC-Q101 Qualified
Dimensions (Unit : mm)
UMT3
SOT-323
2.0
0.3
(3)
0.9
0.2 0.7
(1) Source
(2) Gate
(3) Drain
(2) (1)
0.65 0.65
1.3
0.15
Each lead has same dimensions
Abbreviated symbol : KP
Applications
Switching
Packaging specifications
Package
Code
Type
Basic ordering unit (pieces)
RRHHUU000022NN0066FRA
Taping
T106
3000
Equivalent circuit
(3)
(2) ∗2
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
Pulsed
ID
IDP ∗1
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
IS
ISP ∗1
PD ∗2
Channel temperature
Tch
Storage temperature
Tstg
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended
Limits
60
±20
±200
±800
200
800
200
150
−55 to +150
Unit
V
V
mA
mA
mA
mA
mW
°C
°C
Thermal resistance
Parameter
Symbol
Channel to ambient
Rth (ch-a)∗
∗ With each pin mounted on the recommended land.
Limits
625
Unit
°C / W
∗1
∗1 ESD PROTECTION DIODE (1)
∗2 BODY DIODE
(1) Source
(2) Gate
(3) Drain
∗ A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when fixed voltages are
exceeded.
www.rohm.com
○c 2012 ROHM Co., Ltd. All rights reserved.
1/3
2012.05 - Rev.C
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet RHU002N06FRA.PDF ] | |
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