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PDF RB751VM-40FH Data sheet ( Hoja de datos )
| Número de pieza | RB751VM-40FH | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | ROHM Semiconductor | |
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Schottky Barrier Diode
RB751VM-40FH
Application
High speed switching
Dimensions (Unit : mm)
1.25±0.1
0.1±0.1
0.05
Datasheet
AEC-Q101 Qualified
Land size figure (Unit : mm)
0.9M IN .
Features
1) Ultra small mold type.
(UMD2)
2) Low IR
3) High reliability
Construction
Silicon epitaxial planar
UMD2
Structure
0.3±0.05
0.7±0.2
0.1
ROHM : UMD2 JEITA : SC-90/A
JEDEC :SOD-323
dot (year week factory)
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ11.5.555±0.00.505
Cathode
Anode
0.3±0.1
1.40±0.1
4.0±0.1
φ11..05
Absolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current
VRM
VR
Io
Forward current surge peak (60Hz・1cyc)
Junction temperature
IFSM
Tj
Storage temperature
Tstg
Limits
40
30
30
200
150
40 to 150
Unit
V
V
mA
mA
°C
°C
1.0±0.1
Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF - - 0.37
Reverse current
IR - - 0.5
Capacitance between terminals
Ct - 2 -
Unit Conditions
V IF=1mA
A VR=30V
pF VR=1V , f=1MHz
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.04 - Rev.D
1 page  
RB751VM-40FH
Electrical characteristic curves
Data Sheet
0.01
0.008
0.006
0.004
0.002
DC
D = 1/2
Sin(θ=180)
0
0 10 20 30
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
0.1
0.08
0.06 DC
0.04 D = 1/2
0A Io
0V
t D=t/T VR
T VR=15V
Tj=150°C
0.02 Sin(θ=180)
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
0.10
0.08
0.06
DC
0.04 D = 1/2
0A Io
0V
t D=t/T VR
T VR=15V
Tj=150°C
0.02 Sin(θ=180)
0.00
0
25 50 75 100 125 150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
5
4.5
AVE : 3.34kV
4
3.5
3
2.5
2
1.5
1 AVE : 0.418kV
0.5
0 C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.04 - Rev.D
5 Page | ||
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