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PDF AP10P10GK-HF Data sheet ( Hoja de datos )

Número de pieza AP10P10GK-HF
Descripción P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP10P10GK-HF Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP10P10GK-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower Gate Charge
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
D
SOT-223
S
D
G
Description
AP10P10 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 and SOT package.
BVDSS
RDS(ON)
ID
G
-100V
500mΩ
- 1.65A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
- 100
+20
- 1.65
-1.3
-6
2.78
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
45
Unit
/W
1
201211021

1 page





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