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PDF AP09N90W-HF Data sheet ( Hoja de datos )

Número de pieza AP09N90W-HF
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP09N90W-HF Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP09N90W-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Avalanche test
D
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
S
Description
AP09N90 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-3P package is widely preferred for commercial-industrial
surface mount applications and suited for higher voltage
applications such as SMPS.
BVDSS
RDS(ON)
ID
G
D
S
900V
1.2Ω
8.6A
TO-3P
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Storage Temperature Range
Operating Junction Temperature Range
900
+30
8.6
5
30
240
1.92
18
-55 to 150
-55 to 150
V
V
A
A
A
W
W/
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
0.52
40
Units
/W
/W
1
201501124

1 page




AP09N90W-HF pdf
MARKING INFORMATION
09N90W
YWWSSS
Part Number
Package Code
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
AP09N90W-HF
5

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