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PDF 13N60AF Data sheet ( Hoja de datos )

Número de pieza 13N60AF
Descripción N-Channel Power MOSFET / Transistor
Fabricantes nELL 
Logotipo nELL Logotipo



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No Preview Available ! 13N60AF Hoja de datos, Descripción, Manual

SEMICONDUCTOR
13N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
13A, 600Volts
DESCRIPTION
The Nell 13N60 is a three-terminal silicon
device with current conduction capability of
13A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies. DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 0.26Ω @ VGS = 10V
Ultra low gate charge(40nC max.)
Low reverse transfer capacitance
(CRSS = 3pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-220AB
(13N60A)
GDS
TO-220F
(13N60AF)
D (Drain)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
13
600
0.26 @ VGS = 10V
40
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
lAR=4.3A,RGS=50Ω, VGS=10V
EAS
dv/dt
PD
Single pulse avalanche energy (Note 2)
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt (Note 3)
Total power dissipation (Derate above 25°C)
lAS=4.3A
TC=25°C
TO-220AB
TO-220F
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
VALUE
600
600
±30
13
8.2
39
4.3
1.2
235
100
20
116(0.93)
34(0.27)
-55 to 150
-55 to 150
300
10 (1.1)
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS=4.3A, VDD=50V, RGS=25Ω, starting TJ = 25 °C.
3.ISD ≤ 13A, di/dt ≤ 200A/µs, VDD V(BR)DSS, starting TJ = 25°C.
www.nellsemi.com
Page 1 of 8
UNIT
V
A
mJ
V /ns
W(W/°C)
ºC
lbf.in (N.m)

1 page




13N60AF pdf
SEMICONDUCTOR
TYPICAL CHARACTERISTICS
Fig.1 On-State characteristics
40
Top:
VGS
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
10 Bottom: 5.0V
3
0.6
Notes:
1. 250µs pulse test
2. TC = 25°C
1 10 20
Drain Source voltage, VDS (V)
13N60 Series RRooHHSS
Nell High Power Products
Fig.2 Transfer characteristics
60
10
150°C
25°C
1
0.2
2
4
-55°C
Notes:
1. VDS=20V
2. 250µs pulse width
68
Gate-Source voltage, VGS (V)
Fig.3 On-Resistance variation vs.
Drain current and Gate voltage
0.8
Fig.4 Body diode forward voltage variation vs
Source current and Temperature
100
0.6
0.4 VGS=10V
VGS=20V
0.2
0
0 10 20 30 40
Drain current, lD (A)
Fig.5 Capacitance characteristics
50000
10000
1000
Ciss = Cgs +Cgd (Cds = shorted )
Coss = Cds +Cgs
Crss = Cgd
Ciss
100
Coss
10
1
0.1
Notes:
1. VGS=0V
2. f=1MHz
1 10
Crss
100
Drain-Source Voltage, VDS (V)
600
150°C
10 25°C
1
0.4
Notes:
1. VGS=0V
2. 250µs pulse Test
0.8 1.2 1.4
Source-Drain voltage, VSD (V)
Fig.6 Gate charge characteristics
10
VDS=120V
8 VDS=380V
VDS=480V
6
4
2
Notes:
1. lD=6.5A
0
0 10 20 30 40
Total gate charge ,QG (nC)
www.nellsemi.com
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