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PDF FE3B Data sheet ( Hoja de datos )

Número de pieza FE3B
Descripción Ultra Fast Sinterglass Diode
Fabricantes Vishay 
Logotipo Vishay Logotipo



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No Preview Available ! FE3B Hoja de datos, Descripción, Manual

VISHAY
Ultra Fast Sinterglass Diode
\
Features
• High temperature metallurgically bonded con-
struction
• Cavity-free glass passivated junction
• Superfast recovery time for high efficiency
• Low forward voltage, high current capability
• Hermetically sealed package
• Low leakage current
• High surge current capability
FE3A to FE3D
Vishay Semiconductors
17133
Mechanical Data
Case: Sintered glass case, G4
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Parts Table
Part
FE3A
FE3B
FE3C
FE3D
VRRM = 50 V
VRRM = 100 V
VRRM = 150 V
VRRM = 200 V
Type differentiation
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 1040 mg
Package
G4
G4
G4
G4
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive peak reverse
voltage
Test condition
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
Maximum average forward rectified current
Peak forward surge current
Operating junction and storage temperature
range
0.375 " (9.5 mm) lead length at Tamb = 75 °C
8.3 ms single half sine-wave superimposed
on rated load (JEDEC Method)
Part
FE3A
FE3B
FE3C
FE3D
Symbol
VR =
VRRM
VR =
VRRM
VR =
VRRM
VR =
VRRM
IF(AV)
IFSM
Value
50
100
150
200
3.0
125
TJ, - 55 to +
TSTG
175
Unit
V
V
V
V
A
A
°C
Document Number 86070
Rev. 2, 28-Jan-03
www.vishay.com
1

1 page




FE3B pdf
VISHAY
FE3A to FE3D
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86070
Rev. 2, 28-Jan-03
www.vishay.com
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